語系:
繁體中文
English
說明(常見問題)
登入
回首頁
切換:
標籤
|
MARC模式
|
ISBD
Einstein's Photoemission = Emission ...
~
Ghatak, Kamakhya Prasad.
Einstein's Photoemission = Emission from Heavily-Doped Quantized Structures /
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
Einstein's Photoemission/ by Kamakhya Prasad Ghatak.
其他題名:
Emission from Heavily-Doped Quantized Structures /
作者:
Ghatak, Kamakhya Prasad.
面頁冊數:
XXXVIII, 495 p. 161 illus.online resource. :
Contained By:
Springer Nature eBook
標題:
Quantum physics. -
電子資源:
https://doi.org/10.1007/978-3-319-11188-9
ISBN:
9783319111889
Einstein's Photoemission = Emission from Heavily-Doped Quantized Structures /
Ghatak, Kamakhya Prasad.
Einstein's Photoemission
Emission from Heavily-Doped Quantized Structures /[electronic resource] :by Kamakhya Prasad Ghatak. - 1st ed. 2015. - XXXVIII, 495 p. 161 illus.online resource. - Springer Tracts in Modern Physics,2620081-3869 ;. - Springer Tracts in Modern Physics,260.
From the Contents: Part I Influence of Quantum Confinement on the EP from Non-Parabolic Semiconductors -- The EP from Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors -- Part II The EP from HD III-V Semiconductors and Their Quantized Counter Parts -- The EP from HD Kane Type Semiconductors.
This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring physical properties in the presence of intense light waves which alter the electron energy spectra) have also been discussed in this context. The influence quantizing magnetic field, on the EP of the different HD quantized structures (quantum wells, quantum well HD superlattices and nipi structures) under different physical conditions has been investigated. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of materials science, condensed matter physics, solid-state sciences, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures offered in different Universities and Institutes.
ISBN: 9783319111889
Standard No.: 10.1007/978-3-319-11188-9doiSubjects--Topical Terms:
1179090
Quantum physics.
LC Class. No.: QC173.96-174.52
Dewey Class. No.: 530.12
Einstein's Photoemission = Emission from Heavily-Doped Quantized Structures /
LDR
:03486nam a22004095i 4500
001
965705
003
DE-He213
005
20200630181728.0
007
cr nn 008mamaa
008
201211s2015 gw | s |||| 0|eng d
020
$a
9783319111889
$9
978-3-319-11188-9
024
7
$a
10.1007/978-3-319-11188-9
$2
doi
035
$a
978-3-319-11188-9
050
4
$a
QC173.96-174.52
072
7
$a
PHQ
$2
bicssc
072
7
$a
SCI057000
$2
bisacsh
072
7
$a
PHQ
$2
thema
082
0 4
$a
530.12
$2
23
100
1
$a
Ghatak, Kamakhya Prasad.
$4
aut
$4
http://id.loc.gov/vocabulary/relators/aut
$3
768692
245
1 0
$a
Einstein's Photoemission
$h
[electronic resource] :
$b
Emission from Heavily-Doped Quantized Structures /
$c
by Kamakhya Prasad Ghatak.
250
$a
1st ed. 2015.
264
1
$a
Cham :
$b
Springer International Publishing :
$b
Imprint: Springer,
$c
2015.
300
$a
XXXVIII, 495 p. 161 illus.
$b
online resource.
336
$a
text
$b
txt
$2
rdacontent
337
$a
computer
$b
c
$2
rdamedia
338
$a
online resource
$b
cr
$2
rdacarrier
347
$a
text file
$b
PDF
$2
rda
490
1
$a
Springer Tracts in Modern Physics,
$x
0081-3869 ;
$v
262
505
0
$a
From the Contents: Part I Influence of Quantum Confinement on the EP from Non-Parabolic Semiconductors -- The EP from Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors -- Part II The EP from HD III-V Semiconductors and Their Quantized Counter Parts -- The EP from HD Kane Type Semiconductors.
520
$a
This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring physical properties in the presence of intense light waves which alter the electron energy spectra) have also been discussed in this context. The influence quantizing magnetic field, on the EP of the different HD quantized structures (quantum wells, quantum well HD superlattices and nipi structures) under different physical conditions has been investigated. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of materials science, condensed matter physics, solid-state sciences, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures offered in different Universities and Institutes.
650
0
$a
Quantum physics.
$3
1179090
650
0
$a
Lasers.
$3
557748
650
0
$a
Photonics.
$3
562392
650
0
$a
Optical materials.
$3
672695
650
0
$a
Electronic materials.
$3
1253592
650
0
$a
Nanoscale science.
$3
1253587
650
0
$a
Nanoscience.
$3
632473
650
0
$a
Nanostructures.
$3
561754
650
0
$a
Nanotechnology.
$3
557660
650
1 4
$a
Quantum Physics.
$3
671960
650
2 4
$a
Optics, Lasers, Photonics, Optical Devices.
$3
1112289
650
2 4
$a
Optical and Electronic Materials.
$3
593919
650
2 4
$a
Nanoscale Science and Technology.
$3
783795
710
2
$a
SpringerLink (Online service)
$3
593884
773
0
$t
Springer Nature eBook
776
0 8
$i
Printed edition:
$z
9783319111896
776
0 8
$i
Printed edition:
$z
9783319111872
776
0 8
$i
Printed edition:
$z
9783319364667
830
0
$a
Springer Tracts in Modern Physics,
$x
0081-3869 ;
$v
260
$3
1254078
856
4 0
$u
https://doi.org/10.1007/978-3-319-11188-9
912
$a
ZDB-2-PHA
912
$a
ZDB-2-SXP
950
$a
Physics and Astronomy (SpringerNature-11651)
950
$a
Physics and Astronomy (R0) (SpringerNature-43715)
筆 0 讀者評論
多媒體
評論
新增評論
分享你的心得
Export
取書館別
處理中
...
變更密碼[密碼必須為2種組合(英文和數字)及長度為10碼以上]
登入