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The Source/Drain Engineering of Nano...
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Li, Zhiqiang.
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices/ by Zhiqiang Li.
作者:
Li, Zhiqiang.
面頁冊數:
XIV, 59 p. 52 illus., 49 illus. in color.online resource. :
Contained By:
Springer Nature eBook
標題:
Semiconductors. -
電子資源:
https://doi.org/10.1007/978-3-662-49683-1
ISBN:
9783662496831
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Li, Zhiqiang.
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
[electronic resource] /by Zhiqiang Li. - 1st ed. 2016. - XIV, 59 p. 52 illus., 49 illus. in color.online resource. - Springer Theses, Recognizing Outstanding Ph.D. Research,2190-5053. - Springer Theses, Recognizing Outstanding Ph.D. Research,.
Introduction -- Ge-based Schottky barrier height modulation technology -- Metal germanide technology -- Contact resistance of Ge-based devices -- Conclusions.
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
ISBN: 9783662496831
Standard No.: 10.1007/978-3-662-49683-1doiSubjects--Topical Terms:
578843
Semiconductors.
LC Class. No.: QC610.9-611.8
Dewey Class. No.: 537.622
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
LDR
:02381nam a22004095i 4500
001
976897
003
DE-He213
005
20200705020818.0
007
cr nn 008mamaa
008
201211s2016 gw | s |||| 0|eng d
020
$a
9783662496831
$9
978-3-662-49683-1
024
7
$a
10.1007/978-3-662-49683-1
$2
doi
035
$a
978-3-662-49683-1
050
4
$a
QC610.9-611.8
072
7
$a
TJFD5
$2
bicssc
072
7
$a
TEC008090
$2
bisacsh
072
7
$a
TJFD
$2
thema
082
0 4
$a
537.622
$2
23
100
1
$a
Li, Zhiqiang.
$4
aut
$4
http://id.loc.gov/vocabulary/relators/aut
$3
782976
245
1 4
$a
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
$h
[electronic resource] /
$c
by Zhiqiang Li.
250
$a
1st ed. 2016.
264
1
$a
Berlin, Heidelberg :
$b
Springer Berlin Heidelberg :
$b
Imprint: Springer,
$c
2016.
300
$a
XIV, 59 p. 52 illus., 49 illus. in color.
$b
online resource.
336
$a
text
$b
txt
$2
rdacontent
337
$a
computer
$b
c
$2
rdamedia
338
$a
online resource
$b
cr
$2
rdacarrier
347
$a
text file
$b
PDF
$2
rda
490
1
$a
Springer Theses, Recognizing Outstanding Ph.D. Research,
$x
2190-5053
505
0
$a
Introduction -- Ge-based Schottky barrier height modulation technology -- Metal germanide technology -- Contact resistance of Ge-based devices -- Conclusions.
520
$a
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
650
0
$a
Semiconductors.
$3
578843
650
0
$a
Electronic circuits.
$3
563332
650
0
$a
Nanoscale science.
$3
1253587
650
0
$a
Nanoscience.
$3
632473
650
0
$a
Nanostructures.
$3
561754
650
0
$a
Solid state physics.
$3
641431
650
2 4
$a
Electronic Circuits and Devices.
$3
782968
650
2 4
$a
Nanoscale Science and Technology.
$3
783795
650
2 4
$a
Solid State Physics.
$3
768851
710
2
$a
SpringerLink (Online service)
$3
593884
773
0
$t
Springer Nature eBook
776
0 8
$i
Printed edition:
$z
9783662496817
776
0 8
$i
Printed edition:
$z
9783662496824
776
0 8
$i
Printed edition:
$z
9783662570265
830
0
$a
Springer Theses, Recognizing Outstanding Ph.D. Research,
$x
2190-5053
$3
1253569
856
4 0
$u
https://doi.org/10.1007/978-3-662-49683-1
912
$a
ZDB-2-PHA
912
$a
ZDB-2-SXP
950
$a
Physics and Astronomy (SpringerNature-11651)
950
$a
Physics and Astronomy (R0) (SpringerNature-43715)
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