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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices/ by Zhiqiang Li.
作者:	Li, Zhiqiang.
面頁冊數:	XIV, 59 p. 52 illus., 49 illus. in color.online resource. :
Contained By:	Springer Nature eBook
標題:	Semiconductors. -
電子資源:	https://doi.org/10.1007/978-3-662-49683-1
ISBN:	9783662496831

The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Li, Zhiqiang.

The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices[electronic resource] /by Zhiqiang Li. - 1st ed. 2016. - XIV, 59 p. 52 illus., 49 illus. in color.online resource. - Springer Theses, Recognizing Outstanding Ph.D. Research,2190-5053. - Springer Theses, Recognizing Outstanding Ph.D. Research,.

Introduction -- Ge-based Schottky barrier height modulation technology -- Metal germanide technology -- Contact resistance of Ge-based devices -- Conclusions.

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

ISBN: 9783662496831

Standard No.: 10.1007/978-3-662-49683-1doiSubjects--Topical Terms:

578843
Semiconductors.

LC Class. No.: QC610.9-611.8

Dewey Class. No.: 537.622

The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
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