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Gallium oxide : = materials properti...

Higashiwaki, Masataka,

Gallium oxide : = materials properties, crystal growth, and devices /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Gallium oxide :/ Masataka Higashiwaki, Shizuo Fujita, editors.
Reminder of title:	materials properties, crystal growth, and devices /
other author:	Fujita, Shizuo,
Published:	Cham, Switzerland :Springer, : c2020.,
Description:	xxviii, 764 p. :ill. (some col.) ; : 25 cm.;
Subject:	Semiconductors - Materials. -
ISBN:	9783030371524 (cloth) :

Gallium oxide : = materials properties, crystal growth, and devices /
Gallium oxide :materials properties, crystal growth, and devices /Masataka Higashiwaki, Shizuo Fujita, editors. - Cham, Switzerland :Springer,c2020. - xxviii, 764 p. :ill. (some col.) ;25 cm. - Springer Series in Materials Science ;volume 293. - Springer series in materials science ;106..

Includes bibliographical references and index.

This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga b2 sO b3 s). Ga b2 sO b3 s has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga b2 sO b3 s is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga b2 sO b3 s.

ISBN: 9783030371524 (cloth) :NT4837

Nat. Bib. Agency Control No.: 019931785UkSubjects--Topical Terms:

673601
Semiconductors
--Materials.

LC Class. No.: QD181.G2 / G35 2020

Dewey Class. No.: 546/.675

Gallium oxide : = materials properties, crystal growth, and devices /
LDR:01744cam a2200241 a 450 001 984361
003 OCoLC
005 20201208212645.0
008 201218s2020 sz a b 001 0 eng d
016 7 $a 019931785 $2 Uk
020 $a 9783030371524 (cloth) : $c NT4837
020 $z 9783030371531 (ebook)
035 $a (OCoLC)1127300096
035 $a on1127300096
040 $a YDX $b eng $c NFU $d OCLCQ $d YDXIT $d UKMGB
041 0 # $a eng
050 # 4 $a QD181.G2 $b G35 2020
082 0 4 $a 546/.675 $2 23
245 0 0 $a Gallium oxide : $b materials properties, crystal growth, and devices / $c Masataka Higashiwaki, Shizuo Fujita, editors.
260 # $a Cham, Switzerland : $b Springer, $c c2020.
300 $a xxviii, 764 p. : $b ill. (some col.) ; $c 25 cm.
490 1 $a Springer Series in Materials Science ; $v volume 293
504 $a Includes bibliographical references and index.
520 # $a This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga b2 sO b3 s). Ga b2 sO b3 s has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga b2 sO b3 s is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga b2 sO b3 s.
650 # 0 $a Semiconductors $x Materials. $3 673601
650 # 0 $a Gallium. $3 1276690
700 1 # $a Fujita, Shizuo, $e editor. $3 1276689
700 1 # $a Higashiwaki, Masataka, $e editor. $3 1276688
830 0 $a Springer series in materials science ; $v 106. $3 881461