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Phase Change Memory = Device Physics...
~
Redaelli, Andrea.
Phase Change Memory = Device Physics, Reliability and Applications /
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
Phase Change Memory/ edited by Andrea Redaelli.
其他題名:
Device Physics, Reliability and Applications /
其他作者:
Redaelli, Andrea.
面頁冊數:
XVIII, 330 p. 220 illus., 196 illus. in color.online resource. :
Contained By:
Springer Nature eBook
標題:
Optical materials. -
電子資源:
https://doi.org/10.1007/978-3-319-69053-7
ISBN:
9783319690537
Phase Change Memory = Device Physics, Reliability and Applications /
Phase Change Memory
Device Physics, Reliability and Applications /[electronic resource] :edited by Andrea Redaelli. - 1st ed. 2018. - XVIII, 330 p. 220 illus., 196 illus. in color.online resource.
Chapter 1. Memory overview and PCM introduction -- Chapter 2.Electrical transport in crystalline and amorphous chalcogenides -- Chapter 3.Thermal model and remarkable temperature effects on calcogenide alloys -- Chapter 4.Self-consistent numerical model -- Chapter 5.PCM main reliability features -- Chapter 6.Structure and properties of chalcogenide materials for PCM -- Chapter 7.Material Engineering for PCM Device Optimization -- Chapter 8.PCM scaling -- Chapter 9.PCM device design -- Chapter 10.PCM array architecture and management -- Chapter 11. PCM applications and an outlook to the future.
This book describes the physics of phase change memory devices, starting from basic operation to reliability issues. The book gives a comprehensive overlook of PCM with particular attention to the electrical transport and the phase transition physics between the two states. The book also contains design engineering details on PCM cell architecture, PCM cell arrays (including electrical circuit management), as well as the full spectrum of possible future applications.
ISBN: 9783319690537
Standard No.: 10.1007/978-3-319-69053-7doiSubjects--Topical Terms:
672695
Optical materials.
LC Class. No.: TA1750-1750.22
Dewey Class. No.: 620.11295
Phase Change Memory = Device Physics, Reliability and Applications /
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Chapter 1. Memory overview and PCM introduction -- Chapter 2.Electrical transport in crystalline and amorphous chalcogenides -- Chapter 3.Thermal model and remarkable temperature effects on calcogenide alloys -- Chapter 4.Self-consistent numerical model -- Chapter 5.PCM main reliability features -- Chapter 6.Structure and properties of chalcogenide materials for PCM -- Chapter 7.Material Engineering for PCM Device Optimization -- Chapter 8.PCM scaling -- Chapter 9.PCM device design -- Chapter 10.PCM array architecture and management -- Chapter 11. PCM applications and an outlook to the future.
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