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Research on the Radiation Effects and Compact Model of SiGe HBT

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Research on the Radiation Effects and Compact Model of SiGe HBT/ by Yabin Sun.
作者:	Sun, Yabin.
面頁冊數:	XXIV, 168 p. 171 illus.online resource. :
Contained By:	Springer Nature eBook
標題:	Electronics. -
電子資源:	https://doi.org/10.1007/978-981-10-4612-4
ISBN:	9789811046124

Research on the Radiation Effects and Compact Model of SiGe HBT
Sun, Yabin.

Research on the Radiation Effects and Compact Model of SiGe HBT[electronic resource] /by Yabin Sun. - 1st ed. 2018. - XXIV, 168 p. 171 illus.online resource. - Springer Theses, Recognizing Outstanding Ph.D. Research,2190-5053. - Springer Theses, Recognizing Outstanding Ph.D. Research,.

Introduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion.

This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.

ISBN: 9789811046124

Standard No.: 10.1007/978-981-10-4612-4doiSubjects--Topical Terms:

596389
Electronics.

LC Class. No.: TK7800-8360

Dewey Class. No.: 621.381

Research on the Radiation Effects and Compact Model of SiGe HBT
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