國立虎尾科技大學 |

Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors = From Materials to Devices /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors/ by Sourav Adhikary, Subhananda Chakrabarti.
其他題名:	From Materials to Devices /
作者:	Adhikary, Sourav.
其他作者:	Chakrabarti, Subhananda.
面頁冊數:	XIII, 63 p. 35 illus., 16 illus. in color.online resource. :
Contained By:	Springer Nature eBook
標題:	Electronic circuits. -
電子資源:	https://doi.org/10.1007/978-981-10-5290-3
ISBN:	9789811052903

Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors = From Materials to Devices /
Adhikary, Sourav.

Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared PhotodetectorsFrom Materials to Devices /[electronic resource] :by Sourav Adhikary, Subhananda Chakrabarti. - 1st ed. 2018. - XIII, 63 p. 35 illus., 16 illus. in color.online resource.

Chapter 1: Introduction -- Chapter 2: Structural and Optical Characterization of Quaternary-Capped InAs/GaAs Quantum Dots -- Chapter 3: Effect of Rapid-Thermal Annealing on Quantum Dot Properties -- Chapter 4: In(Ga)As/GaAs Quantum Dot Infrared Photodetectors (QDIPs) with Quaternary Capping -- Chapter 5: Effects of RTA on Quaternary Capped QDIP Characteristics -- Chapter 6: Summary and Future Work.

This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and responsivity and detectivity are all considered. The results also present a narrow spectral width that was obtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike.

ISBN: 9789811052903

Standard No.: 10.1007/978-981-10-5290-3doiSubjects--Topical Terms:

563332
Electronic circuits.

LC Class. No.: TK7888.4

Dewey Class. No.: 621.3815

Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors = From Materials to Devices /
LDR:03109nam a22003975i 4500 001 999362
003 DE-He213
005 20200704064541.0
007 cr nn 008mamaa
008 201225s2018 si | s |||| 0|eng d
020 $a 9789811052903 $9 978-981-10-5290-3
024 7 $a 10.1007/978-981-10-5290-3 $2 doi
035 $a 978-981-10-5290-3
050 4 $a TK7888.4
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
072 7 $a TJFC $2 thema
082 0 4 $a 621.3815 $2 23
100 1 $a Adhikary, Sourav. $e author. $4 aut $4 http://id.loc.gov/vocabulary/relators/aut $3 1290965
245 1 0 $a Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors $h [electronic resource] : $b From Materials to Devices / $c by Sourav Adhikary, Subhananda Chakrabarti.
250 $a 1st ed. 2018.
264 1 $a Singapore : $b Springer Singapore : $b Imprint: Springer, $c 2018.
300 $a XIII, 63 p. 35 illus., 16 illus. in color. $b online resource.
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
347 $a text file $b PDF $2 rda
505 0 $a Chapter 1: Introduction -- Chapter 2: Structural and Optical Characterization of Quaternary-Capped InAs/GaAs Quantum Dots -- Chapter 3: Effect of Rapid-Thermal Annealing on Quantum Dot Properties -- Chapter 4: In(Ga)As/GaAs Quantum Dot Infrared Photodetectors (QDIPs) with Quaternary Capping -- Chapter 5: Effects of RTA on Quaternary Capped QDIP Characteristics -- Chapter 6: Summary and Future Work.
520 $a This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and responsivity and detectivity are all considered. The results also present a narrow spectral width that was obtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike.
650 0 $a Electronic circuits. $3 563332
650 0 $a Lasers. $3 557748
650 0 $a Photonics. $3 562392
650 0 $a Signal processing. $3 561459
650 0 $a Image processing. $3 557495
650 0 $a Speech processing systems. $3 564428
650 1 4 $a Circuits and Systems. $3 670901
650 2 4 $a Electronic Circuits and Devices. $3 782968
650 2 4 $a Optics, Lasers, Photonics, Optical Devices. $3 1112289
650 2 4 $a Signal, Image and Speech Processing. $3 670837
700 1 $a Chakrabarti, Subhananda. $4 aut $4 http://id.loc.gov/vocabulary/relators/aut $3 1142267
710 2 $a SpringerLink (Online service) $3 593884
773 0 $t Springer Nature eBook
776 0 8 $i Printed edition: $z 9789811052897
776 0 8 $i Printed edition: $z 9789811052910
776 0 8 $i Printed edition: $z 9789811353604
856 4 0 $u https://doi.org/10.1007/978-981-10-5290-3
912 $a ZDB-2-ENG
912 $a ZDB-2-SXE
950 $a Engineering (SpringerNature-11647)
950 $a Engineering (R0) (SpringerNature-43712)