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Noise in Nanoscale Semiconductor Devices

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Noise in Nanoscale Semiconductor Devices

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Noise in Nanoscale Semiconductor Devices/ edited by Tibor Grasser.
other author:	Grasser, Tibor.
Description:	VI, 729 p. 550 illus., 443 illus. in color.online resource. :
Contained By:	Springer Nature eBook
Subject:	Electronic circuits. -
Online resource:	https://doi.org/10.1007/978-3-030-37500-3
ISBN:	9783030375003

Noise in Nanoscale Semiconductor Devices
Noise in Nanoscale Semiconductor Devices[electronic resource] /edited by Tibor Grasser. - 1st ed. 2020. - VI, 729 p. 550 illus., 443 illus. in color.online resource.

This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.

ISBN: 9783030375003

Standard No.: 10.1007/978-3-030-37500-3doiSubjects--Topical Terms:

563332
Electronic circuits.

LC Class. No.: TK7888.4

Dewey Class. No.: 621.3815

Noise in Nanoscale Semiconductor Devices
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520 $a This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
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