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Structure, Mechanism, and Electronic Properties of Organic Molecular n-Dopants and n-Doped Materials.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Structure, Mechanism, and Electronic Properties of Organic Molecular n-Dopants and n-Doped Materials./
Author:	Naab, Benjamin D.
Description:	1 online resource (270 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 82-10, Section: B.
Contained By:	Dissertations Abstracts International82-10B.
Subject:	Materials science. -
Online resource:	click for full text (PQDT)
ISBN:	9798698514480

Structure, Mechanism, and Electronic Properties of Organic Molecular n-Dopants and n-Doped Materials.
Naab, Benjamin D.

Structure, Mechanism, and Electronic Properties of Organic Molecular n-Dopants and n-Doped Materials. - 1 online resource (270 pages)

Source: Dissertations Abstracts International, Volume: 82-10, Section: B.

Thesis (Ph.D.)--Stanford University, 2015.

Includes bibliographical references

The low ionization potentials of highly reducing organic n-dopants and host radical anions makes n-doping a much greater challenge than p-doping. However, many modern electronics such as transistors, complementary circuits, light-emitting diodes, photovoltaics, and thermoelectrics either require or benefit from both n- and p-type conduction. It is a long-standing and partially realized goal of the organic electronics community to mass produce devices by exploiting modern printing processes. To accomplish this will require new materials, device architectures, and processing methods. The goal of this thesis was to advance the state of solution-processable conductive n-type organic materials for use in printed organic solar cells, transistors, and thermoelectric devices. In this thesis, a bottom-up mechanistic approach was used to design new organic n-dopants and n-dopable host semiconductors. First, the n-doping mechanism of 1,3-dimethylbenzimidazole (DMBI) derived dopants was studied in solution, and it was discovered that DMBI dopants react with fullerenes by hydride transfer. Following this study, a new class of dimeric dopants ((DMBI)2) were developed to eliminate the dependence of the doping reaction on the hydrogenation thermodynamics of the host. The (DMBI)2 dopants were employed in a thorough synthetic, spectroscopic, and electrical study of new n-dopable conjugated polymers. Ultimately, several polymers with higher conductivities when n-doped than current state-of-the-art materials were identified. The results of this study indicate that the polaron delocalization length is the most relevant parameter to optimize to achieve high conductivity n-doped polymer films. Building upon this work, a class of self-n-doped polymers with remarkable stability in air were developed. Finally, as a demonstration of the utility of the new materials reported in this thesis, fully solution-processed logic gates and organic solar cells with n-doped layers were fabricated.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9798698514480Subjects--Topical Terms:

557839
Materials science.
Subjects--Index Terms:

Low ionization potentialsIndex Terms--Genre/Form:

554714
Electronic books.

Structure, Mechanism, and Electronic Properties of Organic Molecular n-Dopants and n-Doped Materials.
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