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Current-Induced Dynamics of Easy-Plane Antiferromagnets.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Current-Induced Dynamics of Easy-Plane Antiferromagnets./
Author:	Zhang, Pengxiang.
Description:	1 online resource (216 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 85-02, Section: B.
Contained By:	Dissertations Abstracts International85-02B.
Subject:	Crystal structure. -
Online resource:	click for full text (PQDT)
ISBN:	9798380097444

Current-Induced Dynamics of Easy-Plane Antiferromagnets.
Zhang, Pengxiang.

Current-Induced Dynamics of Easy-Plane Antiferromagnets. - 1 online resource (216 pages)

Source: Dissertations Abstracts International, Volume: 85-02, Section: B.

Thesis (Ph.D.)--Massachusetts Institute of Technology, 2023.

Includes bibliographical references

Antiferromagnetic memory devices are expected to be very fast, stable, dense and energy-efficient, making them promising for the next generation non-volatile random-access memory. However, in antiferromagnets, it used to be challenging to accurately understand the current-induced dynamics, especially the spin-orbit-torque switching dynamics. To realize a practical antiferromagnetic memory device, we must overcome the challenge.In this PhD Thesis, I discussed about the systematic and quantitative study of a model material, collinear easy-plane antiferromagnetic insulator α-Fe2O3 covered by Pt, for non-spin-orbit-torque switching mechanisms, magnon spin transport, and finally, the long-anticipated damping-like-torque switching, and the method to quantitatively characterize the spin-orbit torques. And I also discussed about the study about the damping-like-torque switching of a non-collinear easy-plane antiferromagnetic metal Mn3Sn, and the handedness anomaly of the switching direction.These studies deepen the scientific understandings of spin-orbit torque dynamics in antiferromagnets, and pave the way to real-life applications of antiferromagnetic memory devices.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9798380097444Subjects--Topical Terms:

1372699
Crystal structure.
Index Terms--Genre/Form:

554714
Electronic books.

Current-Induced Dynamics of Easy-Plane Antiferromagnets.
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500 $a Source: Dissertations Abstracts International, Volume: 85-02, Section: B.
500 $a Advisor: Liu, Luqiao.
502 $a Thesis (Ph.D.)--Massachusetts Institute of Technology, 2023.
504 $a Includes bibliographical references
520 $a Antiferromagnetic memory devices are expected to be very fast, stable, dense and energy-efficient, making them promising for the next generation non-volatile random-access memory. However, in antiferromagnets, it used to be challenging to accurately understand the current-induced dynamics, especially the spin-orbit-torque switching dynamics. To realize a practical antiferromagnetic memory device, we must overcome the challenge.In this PhD Thesis, I discussed about the systematic and quantitative study of a model material, collinear easy-plane antiferromagnetic insulator α-Fe2O3 covered by Pt, for non-spin-orbit-torque switching mechanisms, magnon spin transport, and finally, the long-anticipated damping-like-torque switching, and the method to quantitatively characterize the spin-orbit torques. And I also discussed about the study about the damping-like-torque switching of a non-collinear easy-plane antiferromagnetic metal Mn3Sn, and the handedness anomaly of the switching direction.These studies deepen the scientific understandings of spin-orbit torque dynamics in antiferromagnets, and pave the way to real-life applications of antiferromagnetic memory devices.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2024
538 $a Mode of access: World Wide Web
650 4 $a Crystal structure. $3 1372699
650 4 $a Electromagnetism. $3 563970
650 4 $a Temperature. $3 1015941
650 4 $a Magnetic fields. $3 598365
650 4 $a Heavy metals. $3 905028
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650 4 $a Energy consumption. $3 571871
650 4 $a Thin films. $3 560219
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650 4 $a Condensed matter physics. $3 1148471
650 4 $a Electrical engineering. $3 596380
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