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Scaling and Design of Thin Film Ferroelectric Hafnium Oxide for Memory and Logic Devices.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Scaling and Design of Thin Film Ferroelectric Hafnium Oxide for Memory and Logic Devices./
Author:	Walters, Glen Harris.
Description:	1 online resource (171 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 82-06, Section: B.
Contained By:	Dissertations Abstracts International82-06B.
Subject:	Electrical engineering. -
Online resource:	click for full text (PQDT)
ISBN:	9798698594918

Scaling and Design of Thin Film Ferroelectric Hafnium Oxide for Memory and Logic Devices.
Walters, Glen Harris.

Scaling and Design of Thin Film Ferroelectric Hafnium Oxide for Memory and Logic Devices. - 1 online resource (171 pages)

Source: Dissertations Abstracts International, Volume: 82-06, Section: B.

Thesis (Ph.D.)--University of Florida, 2020.

Includes bibliographical references

The recent discovery of ferroelectricity in thin film hafnium oxide has enabled a new field of low power, nonvolatile, and CMOS compatible memory and logic technologies. Ultra-thin hafnium oxide based ferroelectric random access memory (FRAM), ferroelectric tunnel junctions (FTJs), ferroelectric field effect transistors (FeFETS), and ferroelectric based transducers have the potential to advance beyond the current technology limitations. This work examines ferroelectricity in doped and un-doped hafnium oxide as a function of the film thickness, substrate, electrodes, deposition method, and film layering with careful consideration given to device integration and device applications. Methods are presented which aid in determining the window of ferroelectric operation for hafnium oxide thin films. A novel plasma based deposition technique is introduced which enhances the ferroelectric polarization of the hafnium oxide films compared to other deposition methods. Various devices structures are explored to optimize ferroelectric or leakage current performance. Multi-layer ferroelectric tunnel junction device architectures are examined which overcome the signal margin limiting leakage current issues encountered in single layer hafnium oxide FTJ devices. Reliability issues such as thermal depolarization, imprint, and cycling lifetime are also explored. Ferroelectric transducers are demonstrated for the first time utilizing thin film hafnium oxide.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9798698594918Subjects--Topical Terms:

596380
Electrical engineering.
Subjects--Index Terms:

ALDIndex Terms--Genre/Form:

554714
Electronic books.

Scaling and Design of Thin Film Ferroelectric Hafnium Oxide for Memory and Logic Devices.
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245 1 0 $a Scaling and Design of Thin Film Ferroelectric Hafnium Oxide for Memory and Logic Devices.
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500 $a Source: Dissertations Abstracts International, Volume: 82-06, Section: B.
500 $a Advisor: Nishida, Toshikazu.
502 $a Thesis (Ph.D.)--University of Florida, 2020.
504 $a Includes bibliographical references
520 $a The recent discovery of ferroelectricity in thin film hafnium oxide has enabled a new field of low power, nonvolatile, and CMOS compatible memory and logic technologies. Ultra-thin hafnium oxide based ferroelectric random access memory (FRAM), ferroelectric tunnel junctions (FTJs), ferroelectric field effect transistors (FeFETS), and ferroelectric based transducers have the potential to advance beyond the current technology limitations. This work examines ferroelectricity in doped and un-doped hafnium oxide as a function of the film thickness, substrate, electrodes, deposition method, and film layering with careful consideration given to device integration and device applications. Methods are presented which aid in determining the window of ferroelectric operation for hafnium oxide thin films. A novel plasma based deposition technique is introduced which enhances the ferroelectric polarization of the hafnium oxide films compared to other deposition methods. Various devices structures are explored to optimize ferroelectric or leakage current performance. Multi-layer ferroelectric tunnel junction device architectures are examined which overcome the signal margin limiting leakage current issues encountered in single layer hafnium oxide FTJ devices. Reliability issues such as thermal depolarization, imprint, and cycling lifetime are also explored. Ferroelectric transducers are demonstrated for the first time utilizing thin film hafnium oxide.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2024
538 $a Mode of access: World Wide Web
650 4 $a Electrical engineering. $3 596380
650 4 $a Ferroelectrics. $3 1475110
650 4 $a CMOS. $2 swd $3 880951
650 4 $a Semiconductors. $3 578843
650 4 $a Thin films. $3 560219
653 $a ALD
653 $a Ferroelectric
653 $a Hafnium oxide
653 $a Thin film
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710 2 $a University of Florida. $b Electrical and Computer Engineering. $3 1475109
773 0 $t Dissertations Abstracts International $g 82-06B.
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