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Optoelectronic and Thermal Properties of Metallic Transition Metal Dichalcogenides = = Gecis Metal Dikalkojenitlerinin Optoelektronik ve Termal Ozellikleri.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Optoelectronic and Thermal Properties of Metallic Transition Metal Dichalcogenides =/
Reminder of title:	Gecis Metal Dikalkojenitlerinin Optoelektronik ve Termal Ozellikleri.
remainder title:	Gecis Metal Dikalkojenitlerinin Optoelektronik ve Termal Ozellikleri.
Author:	Mehmood, Naveed.
Description:	1 online resource (129 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 83-10, Section: B.
Contained By:	Dissertations Abstracts International83-10B.
Subject:	Photographs. -
Online resource:	click for full text (PQDT)
ISBN:	9798209944829

Optoelectronic and Thermal Properties of Metallic Transition Metal Dichalcogenides = = Gecis Metal Dikalkojenitlerinin Optoelektronik ve Termal Ozellikleri.
Mehmood, Naveed.

Optoelectronic and Thermal Properties of Metallic Transition Metal Dichalcogenides =Gecis Metal Dikalkojenitlerinin Optoelektronik ve Termal Ozellikleri.Gecis Metal Dikalkojenitlerinin Optoelektronik ve Termal Ozellikleri. - 1 online resource (129 pages)

Source: Dissertations Abstracts International, Volume: 83-10, Section: B.

Thesis (Ph.D.)--Bilkent Universitesi (Turkey), 2020.

Includes bibliographical references

After the successful isolation of graphene monolayer from its bulky counterpart, there has been tremendous advancement in the field of 2D material. Transition metal dichalcogenides(TMDCs) is family of 2D materials comprising of a transition metal atom sandwiched between two chalcogen atoms. Photoresponse of semiconducting TMDCs has been studied extensively in literature. However, photoresponse from metallic TMDCs is unprecedented and hence has not been studied to explore which mechanism might prevail. Among our findings, we discovered that photocurrent generation through metallic TMDCs is possible and has a photo-thermal origin. Using scanning photo-current microscopy, we were able to obtain spatial photocurrent maps for both, zero biased and biased samples. At zero applied bias, the photocurrent generation is localized to metal-metal junction and governed by Seebeck effect. At finite applied bias, photocurrent from the whole crystal is observed and is due to photobolometric effect. As Photo-bolometric effect relies on photo-thermally induced resistance change of the material, we extended our study to extract thermal conductivity of metallic TMDCs via bolometric effect. As contact of crystal with substrate act as a heat sink, we used suspended crystals over a hole to thermally isolate it from any heat sink. Resistance change via laser induced heating is experimentally measured at the center of the suspended part of crystal. Measured resistance change is matched with expected resistance change which is calculated using thermal conductivity(κ) as a fitting parameter via commercially available finite element method package(COMSOL). This way, thermal conductivity of the metallic TMDCs is calculated with very high accuracy and precision.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9798209944829Subjects--Topical Terms:

658117
Photographs.
Index Terms--Genre/Form:

554714
Electronic books.

Optoelectronic and Thermal Properties of Metallic Transition Metal Dichalcogenides = = Gecis Metal Dikalkojenitlerinin Optoelektronik ve Termal Ozellikleri.
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245 1 0 $a Optoelectronic and Thermal Properties of Metallic Transition Metal Dichalcogenides = $b Gecis Metal Dikalkojenitlerinin Optoelektronik ve Termal Ozellikleri.
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500 $a Source: Dissertations Abstracts International, Volume: 83-10, Section: B.
500 $a Advisor: Kasirga, Talip Serkan.
502 $a Thesis (Ph.D.)--Bilkent Universitesi (Turkey), 2020.
504 $a Includes bibliographical references
520 $a After the successful isolation of graphene monolayer from its bulky counterpart, there has been tremendous advancement in the field of 2D material. Transition metal dichalcogenides(TMDCs) is family of 2D materials comprising of a transition metal atom sandwiched between two chalcogen atoms. Photoresponse of semiconducting TMDCs has been studied extensively in literature. However, photoresponse from metallic TMDCs is unprecedented and hence has not been studied to explore which mechanism might prevail. Among our findings, we discovered that photocurrent generation through metallic TMDCs is possible and has a photo-thermal origin. Using scanning photo-current microscopy, we were able to obtain spatial photocurrent maps for both, zero biased and biased samples. At zero applied bias, the photocurrent generation is localized to metal-metal junction and governed by Seebeck effect. At finite applied bias, photocurrent from the whole crystal is observed and is due to photobolometric effect. As Photo-bolometric effect relies on photo-thermally induced resistance change of the material, we extended our study to extract thermal conductivity of metallic TMDCs via bolometric effect. As contact of crystal with substrate act as a heat sink, we used suspended crystals over a hole to thermally isolate it from any heat sink. Resistance change via laser induced heating is experimentally measured at the center of the suspended part of crystal. Measured resistance change is matched with expected resistance change which is calculated using thermal conductivity(κ) as a fitting parameter via commercially available finite element method package(COMSOL). This way, thermal conductivity of the metallic TMDCs is calculated with very high accuracy and precision.
520 $a Tek katmanli grafenin bulk muadilinden ba¸sar ili bir ¸sekilde izolasyonunda sonra, iki boyutlu malzemeler alaninda b¨uy¨uk bir ilerleme oldu. Ge¸ci¸s metal kalkojenleri (GMK) bir ge¸ci¸s metal atomun iki kalkojen atomu arasina sikiltirilmasinii¸ceren iki boyutlu malzemelerin ailesidir. Yari iletken GMK'larin i¸si˘ga tepkileri literat¨urde kapsamli bir ¸sekilde incelendi. Ancak, metalik GMK'larin i¸si˘ga tepkilerine daha ¨onceden g¨or¨ulmedi ve dolayisiyla ge¸cerli olan i¸sleyi¸s ¸seklini ke¸sfedecek ¸cali¸smalar olmadi. Bulgularimiz arasinda, metalik GMK'lar aracili˘gi ile fotoakim ¨uretmenin m¨umk¨un oldu˘gunu ve bir foto-termal k¨okene sahip oldu˘gunu ke¸sfettik. Taramali foto-akim mikroskobunu numunelerin hem sifir ¨onakim hem de ¨on akimsiz kullanarak, uzamsal fotoakim haritalarini elde edebildik. Uygulanan sifir ¨onakiminda, foto akim ¨uretimi metal-metal ba˘glantisinda yer alir ve Seebeck etkisi ile y¨onetilir. Uygulanan ¨ol¸c¨ulebilir ¨on akimda, fotobolometrik etkiden dolayi, t¨um kristalden gelen foto akim g¨ozlemlendi. Foto-bolometrik etki malzemenin fototermal ind¨uklenen diren¸c de˘gi¸simine dayandi˘gindan, metallic GMK'larin termal iletimlerini bolometrik etki aracili˘gi ile elde etmek i¸cin ¸cali¸smamizi geni¸slettik. Kristalin alta¸s ile temasi, bir isi havuzu gibi davrandi˘gindan, herhangi bir isi havuzudan termal olarak izolasyon sa˘glamak i¸cin bir delik ¨uzerine birakilan kristalleri kullandik. Lazerin kaynaklandi˘gi isima ile olu¸san diren¸c de˘gi¸simi kristalin merkezinden deneysel olarak ¨ol¸c¨ulm¨u¸st¨ur. Piyasada satilan sonlu eleman metodu paketi ( COMSOL) aracili˘gi ile, Termal iletkenli˘gin (κ) uyma paramatresi olarak kullanildi˘gi ¨ol¸c¨um de˘gi¸simleri ve beklenen diren¸c de˘gi¸simi e¸sle¸smektedir. Bu ¸sekilde, metallik GMK'larin termal iletkenli˘gi y¨uksek kesinlik ve do˘gruluk ile hesaplandi.
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538 $a Mode of access: World Wide Web
650 4 $a Photographs. $3 658117
650 4 $a Electrodes. $3 581312
650 4 $a Lasers. $3 557748
650 4 $a Electric fields. $3 903633
650 4 $a Microscopy. $3 582141
650 4 $a Chemical vapor deposition. $3 903407
650 4 $a Maps. $3 889832
650 4 $a Chemistry. $3 593913
650 4 $a Graphene. $3 886892
650 4 $a Heat conductivity. $3 1372522
650 4 $a Atoms & subatomic particles. $3 1372795
650 4 $a Atomic physics. $3 1182532
650 4 $a Optics. $3 595336
650 4 $a Physics. $3 564049
655 7 $a Electronic books. $2 local $3 554714
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710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a Bilkent Universitesi (Turkey). $3 1413631
773 0 $t Dissertations Abstracts International $g 83-10B.
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29045061 $z click for full text (PQDT)