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Rapid Thermal Annealing of Transition Metal Silicides (Epitaxial Silicides, Electrical Properties, Bilayers, Pseudo-Binary Silicides, Growth Kinetics)

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Rapid Thermal Annealing of Transition Metal Silicides (Epitaxial Silicides, Electrical Properties, Bilayers, Pseudo-Binary Silicides, Growth Kinetics)/
Author:	Wei, Chih-Shih (John).
Description:	1 online resource (300 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 47-07, Section: B.
Contained By:	Dissertations Abstracts International47-07B.
Subject:	Electrical engineering. -
Online resource:	click for full text (PQDT)
ISBN:	9798206589849

Rapid Thermal Annealing of Transition Metal Silicides (Epitaxial Silicides, Electrical Properties, Bilayers, Pseudo-Binary Silicides, Growth Kinetics)
Wei, Chih-Shih (John).

Rapid Thermal Annealing of Transition Metal Silicides (Epitaxial Silicides, Electrical Properties, Bilayers, Pseudo-Binary Silicides, Growth Kinetics) - 1 online resource (300 pages)

Source: Dissertations Abstracts International, Volume: 47-07, Section: B.

Thesis (Ph.D.)--University of Pennsylvania, 1986.

Includes bibliographical references

The technique of Rapid Thermal Annealing (RTA) is used to form transition metal silicides. A RTA system consisting of tungsten-halogen lamps and a vacuum reactor with accurate temperature-time control and data-acquisition was constructed for this purpose. Refractory metal silicides, such as those of titanium and tungsten, and near-noble metal silicides, such as those of palladium and platinum, are investigated. The feasibility of using RTA for silicide formation is verified by the smooth, uniform, stoichiometric and low resistance RTA-silicide films. There is no observed difference between RTA-silicides and conventional furnace annealed silicides as far as the following factors are concerned: (1) the first silicide phase formed, (2) the formation temperature of silicide, (3) the diffusing species during silicide formation, (4) the electrical characteristics and (5) the formation mechanism and activation energy. The high radiant power density and the small thermal mass in a RTA system and the high radiant energy coupling efficiency into Si wafers at short wavelength increase the sample temperature in a fast way and therefore, reduce the amount of time required for a complete silicide formation.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9798206589849Subjects--Topical Terms:

596380
Electrical engineering.
Index Terms--Genre/Form:

554714
Electronic books.

Rapid Thermal Annealing of Transition Metal Silicides (Epitaxial Silicides, Electrical Properties, Bilayers, Pseudo-Binary Silicides, Growth Kinetics)
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100 1 $a Wei, Chih-Shih (John). $3 1475301
245 1 0 $a Rapid Thermal Annealing of Transition Metal Silicides (Epitaxial Silicides, Electrical Properties, Bilayers, Pseudo-Binary Silicides, Growth Kinetics)
264 0 $c 1986
300 $a 1 online resource (300 pages)
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500 $a Source: Dissertations Abstracts International, Volume: 47-07, Section: B.
500 $a Publisher info.: Dissertation/Thesis.
502 $a Thesis (Ph.D.)--University of Pennsylvania, 1986.
504 $a Includes bibliographical references
520 $a The technique of Rapid Thermal Annealing (RTA) is used to form transition metal silicides. A RTA system consisting of tungsten-halogen lamps and a vacuum reactor with accurate temperature-time control and data-acquisition was constructed for this purpose. Refractory metal silicides, such as those of titanium and tungsten, and near-noble metal silicides, such as those of palladium and platinum, are investigated. The feasibility of using RTA for silicide formation is verified by the smooth, uniform, stoichiometric and low resistance RTA-silicide films. There is no observed difference between RTA-silicides and conventional furnace annealed silicides as far as the following factors are concerned: (1) the first silicide phase formed, (2) the formation temperature of silicide, (3) the diffusing species during silicide formation, (4) the electrical characteristics and (5) the formation mechanism and activation energy. The high radiant power density and the small thermal mass in a RTA system and the high radiant energy coupling efficiency into Si wafers at short wavelength increase the sample temperature in a fast way and therefore, reduce the amount of time required for a complete silicide formation.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2024
538 $a Mode of access: World Wide Web
650 4 $a Electrical engineering. $3 596380
650 4 $a Materials science. $3 557839
655 7 $a Electronic books. $2 local $3 554714
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