國立虎尾科技大學 |

Fabrication of Tungsten Oxide Thin Film on Stainless Steel by Sol-Gel Method.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Fabrication of Tungsten Oxide Thin Film on Stainless Steel by Sol-Gel Method./
Author:	Momanyi, Geoffrey.
Description:	1 online resource (83 pages)
Notes:	Source: Masters Abstracts International, Volume: 84-11.
Contained By:	Masters Abstracts International84-11.
Subject:	Nanotechnology. -
Online resource:	click for full text (PQDT)
ISBN:	9798379521820

Fabrication of Tungsten Oxide Thin Film on Stainless Steel by Sol-Gel Method.
Momanyi, Geoffrey.

Fabrication of Tungsten Oxide Thin Film on Stainless Steel by Sol-Gel Method. - 1 online resource (83 pages)

Source: Masters Abstracts International, Volume: 84-11.

Thesis (M.S.)--Youngstown State University, 2023.

Includes bibliographical references

Metal oxide semiconductor materials such as tungsten oxide are promising candidates for use as photoanodes in solar water splitting. Tungsten oxide is an n-type semiconductor that was prepared on stainless steel 304 substrate and subsequently studied for water-splitting applications. This study investigated the effect of the annealing temperature and substrate cleaning reagents on the photoelectrochemical (PEC) properties of tungsten oxide thin films. The main method of synthesis employed was the sol-gel method. Tungsten oxide thin films were deposited from a precursor solution of peroxotungstic acid by doctor blading. The as-deposited amorphous WO3 films were further subjected to heat treatment at various annealing temperatures (200 °C, 300 °C, 400 °C, and 500 °C) to transform the amorphous material into polycrystalline WO3 nanostructures. Surface morphology, the crystallinity of the film, the thickness of the film, and photoelectrochemical properties were investigated using scanning electron microscopy, (SEM), X-ray diffractometry (XRD), stylus profilometry, cyclic voltammetry (CV), and linear sweep voltammetry (LSV). The optimal WO3 film, at a thickness of 5 µm and annealed at 400 °C, achieved a photocurrent density of 98.0 µA/cm2 at an applied voltage of 0.53 V vs Ag/AgCl. It is essential to treat the substrate with HNO3 to passivate the surface of the stainless-steel substrate with the Cr2O3 layer.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9798379521820Subjects--Topical Terms:

557660
Nanotechnology.
Subjects--Index Terms:

Tungsten oxideIndex Terms--Genre/Form:

554714
Electronic books.

Fabrication of Tungsten Oxide Thin Film on Stainless Steel by Sol-Gel Method.
LDR:02895ntm a22004457 4500 001 1150398
005 20241028051436.5
006 m o d
007 cr bn ---uuuuu
008 250605s2023 xx obm 000 0 eng d
020 $a 9798379521820
035 $a (MiAaPQ)AAI30540615
035 $a (MiAaPQ)OhioLINKysu1683732746275437
035 $a AAI30540615
040 $a MiAaPQ $b eng $c MiAaPQ $d NTU
100 1 $a Momanyi, Geoffrey. $3 1476872
245 1 0 $a Fabrication of Tungsten Oxide Thin Film on Stainless Steel by Sol-Gel Method.
264 0 $c 2023
300 $a 1 online resource (83 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Masters Abstracts International, Volume: 84-11.
500 $a Advisor: Linkous, Clovis A.
502 $a Thesis (M.S.)--Youngstown State University, 2023.
504 $a Includes bibliographical references
520 $a Metal oxide semiconductor materials such as tungsten oxide are promising candidates for use as photoanodes in solar water splitting. Tungsten oxide is an n-type semiconductor that was prepared on stainless steel 304 substrate and subsequently studied for water-splitting applications. This study investigated the effect of the annealing temperature and substrate cleaning reagents on the photoelectrochemical (PEC) properties of tungsten oxide thin films. The main method of synthesis employed was the sol-gel method. Tungsten oxide thin films were deposited from a precursor solution of peroxotungstic acid by doctor blading. The as-deposited amorphous WO3 films were further subjected to heat treatment at various annealing temperatures (200 °C, 300 °C, 400 °C, and 500 °C) to transform the amorphous material into polycrystalline WO3 nanostructures. Surface morphology, the crystallinity of the film, the thickness of the film, and photoelectrochemical properties were investigated using scanning electron microscopy, (SEM), X-ray diffractometry (XRD), stylus profilometry, cyclic voltammetry (CV), and linear sweep voltammetry (LSV). The optimal WO3 film, at a thickness of 5 µm and annealed at 400 °C, achieved a photocurrent density of 98.0 µA/cm2 at an applied voltage of 0.53 V vs Ag/AgCl. It is essential to treat the substrate with HNO3 to passivate the surface of the stainless-steel substrate with the Cr2O3 layer.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2024
538 $a Mode of access: World Wide Web
650 4 $a Nanotechnology. $3 557660
650 4 $a Chemistry. $3 593913
650 4 $a Energy. $3 784773
650 4 $a Alternative energy. $3 1241221
650 4 $a Environmental science. $3 1179128
650 4 $a Analytical chemistry. $3 1182118
653 $a Tungsten oxide
653 $a Sol-gel
653 $a Thin films
653 $a Stainless steel
653 $a Linear sweep voltammetry
655 7 $a Electronic books. $2 local $3 554714
690 $a 0652
690 $a 0485
690 $a 0486
690 $a 0791
690 $a 0363
690 $a 0768
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a Youngstown State University. $b Department of Biological Sciences and Chemistry. $3 1372704
773 0 $t Masters Abstracts International $g 84-11.
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30540615 $z click for full text (PQDT)