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Silicon carbide power devices = characteristics, test and application /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Silicon carbide power devices/ by Yuan Gao, Yan Zhang.
Reminder of title:	characteristics, test and application /
Author:	Gao, Yuan.
other author:	Zhang, Yan.
Published:	Singapore :Springer Nature Singapore : : 2025.,
Description:	xl, 663 p. :ill., digital ; : 24 cm.;
Contained By:	Springer Nature eBook
Subject:	Semiconductors. -
Online resource:	https://doi.org/10.1007/978-981-96-3480-4
ISBN:	9789819634804

Silicon carbide power devices = characteristics, test and application /
Gao, Yuan.

Silicon carbide power devicescharacteristics, test and application /[electronic resource] :by Yuan Gao, Yan Zhang. - Singapore :Springer Nature Singapore :2025. - xl, 663 p. :ill., digital ;24 cm. - CPSS power electronics series,2520-8861. - CPSS power electronics series..

Fundamentals of Power Semiconductor Devices -- SiC Diode Main Characteristics -- Interpretation, Testing, and Application of SiC MOSFET Parameters -- Comparison of SiC and Si Device Characteristics -- Double-Pulse Test -- SiC Device Testing and Failure Analysis Techniques -- High di/dt Effects and Countermeasures - Turn-off Voltage Overshoot -- Effects and Mitigation of High dv/dt - Crosstalk -- Impact and Countermeasures of High dv/dt - Common Mode Current -- Effects and Countermeasures of Common Source Inductance -- Drive Circuit -- Main Applications of SiC Devices.

This book provides comprehensive technical information on SiC power devices from multiple perspectives, covering topics from device research and development to system applications. Chapters 1 to 4 focus on the characteristics of SiC devices, initially outlining the limitations of Si power devices and explaining why SiC has superior properties at the material level. It then offers updates on the latest developments in the SiC industry chain and products innovations, along with a detailed discussion of the characteristics and specifications of SiC Diodes and MOSFETs. Chapters 5 and 6 zoom in on SiC device testing and evaluation techniques, including CP testing, FT testing, system application testing, reliability assessment, failure analysis, and double-pulse testing. Chapters 7 to 12 focus on SiC device application technology, addressing common challenges in real applications and providing solutions. This includes voltage spikes during turn-off, crosstalk, common-mode current, common-source inductance, and driver circuits, concluding with case studies of SiC device applications in various scenarios. The book can serve as a textbook for higher education and vocational training, as well as a reference material for engineers in the power semiconductor and electrical electronics industries. To make the book genuinely helpful for readers, the authors have invested significant effort in content and data selection. First, the chosen technical points come from real-world requirements in device R&D and applications. Second, the book emphasizes practicality while integrating cutting-edge developments, detailing research outcomes with industrial potential. Third, the book offers a wealth of data and waveforms, most of which are actual measurements, to bridge the gap between theory and practice. Lastly, extensive further reading materials are provided at the end of each chapter for broader and deeper exploration.

ISBN: 9789819634804

Standard No.: 10.1007/978-981-96-3480-4doiSubjects--Topical Terms:

578843
Semiconductors.

LC Class. No.: TK7881.15 / .G36 2025

Dewey Class. No.: 621.38152

Silicon carbide power devices = characteristics, test and application /
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505 0 $a Fundamentals of Power Semiconductor Devices -- SiC Diode Main Characteristics -- Interpretation, Testing, and Application of SiC MOSFET Parameters -- Comparison of SiC and Si Device Characteristics -- Double-Pulse Test -- SiC Device Testing and Failure Analysis Techniques -- High di/dt Effects and Countermeasures - Turn-off Voltage Overshoot -- Effects and Mitigation of High dv/dt - Crosstalk -- Impact and Countermeasures of High dv/dt - Common Mode Current -- Effects and Countermeasures of Common Source Inductance -- Drive Circuit -- Main Applications of SiC Devices.
520 $a This book provides comprehensive technical information on SiC power devices from multiple perspectives, covering topics from device research and development to system applications. Chapters 1 to 4 focus on the characteristics of SiC devices, initially outlining the limitations of Si power devices and explaining why SiC has superior properties at the material level. It then offers updates on the latest developments in the SiC industry chain and products innovations, along with a detailed discussion of the characteristics and specifications of SiC Diodes and MOSFETs. Chapters 5 and 6 zoom in on SiC device testing and evaluation techniques, including CP testing, FT testing, system application testing, reliability assessment, failure analysis, and double-pulse testing. Chapters 7 to 12 focus on SiC device application technology, addressing common challenges in real applications and providing solutions. This includes voltage spikes during turn-off, crosstalk, common-mode current, common-source inductance, and driver circuits, concluding with case studies of SiC device applications in various scenarios. The book can serve as a textbook for higher education and vocational training, as well as a reference material for engineers in the power semiconductor and electrical electronics industries. To make the book genuinely helpful for readers, the authors have invested significant effort in content and data selection. First, the chosen technical points come from real-world requirements in device R&D and applications. Second, the book emphasizes practicality while integrating cutting-edge developments, detailing research outcomes with industrial potential. Third, the book offers a wealth of data and waveforms, most of which are actual measurements, to bridge the gap between theory and practice. Lastly, extensive further reading materials are provided at the end of each chapter for broader and deeper exploration.
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