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Reliability of high mobility SiGe ch...
~
Franco, Jacopo.
Reliability of high mobility SiGe channel MOSFETs for future CMOS applications
Record Type:
Language materials, printed : Monograph/item
Title/Author:
Reliability of high mobility SiGe channel MOSFETs for future CMOS applications/ by Jacopo Franco, Ben Kaczer, Guido Groeseneken.
Author:
Franco, Jacopo.
other author:
Kaczer, Ben.
Published:
Dordrecht :Springer Netherlands : : 2014.,
Description:
xix, 187 p. :ill., digital ; : 24 cm.;
Contained By:
Springer eBooks
Subject:
Metal oxide semiconductor field-effect transistors - Reliability. -
Online resource:
http://dx.doi.org/10.1007/978-94-007-7663-0
ISBN:
9789400776630 (electronic bk.)
Reliability of high mobility SiGe channel MOSFETs for future CMOS applications
Franco, Jacopo.
Reliability of high mobility SiGe channel MOSFETs for future CMOS applications
[electronic resource] /by Jacopo Franco, Ben Kaczer, Guido Groeseneken. - Dordrecht :Springer Netherlands :2014. - xix, 187 p. :ill., digital ;24 cm. - Springer Series in Advanced Microelectronics,v.471437-0387 ;. - Springer series in advanced microelectronics ;33..
ISBN: 9789400776630 (electronic bk.)Subjects--Topical Terms:
1021203
Metal oxide semiconductor field-effect transistors
--Reliability.
Dewey Class. No.: 621.3815284
Reliability of high mobility SiGe channel MOSFETs for future CMOS applications
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Engineering (Springer-11647)
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