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Charge-trapping non-volatile memorie...

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Charge-trapping non-volatile memories.. Volume 1,. Basic and advanced devices

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Charge-trapping non-volatile memories./ edited by Panagiotis Dimitrakis.
remainder title:	Basic and advanced devices
other author:	Dimitrakis, Panagiotis.
Published:	Cham :Springer International Publishing : : 2015.,
Description:	ix, 211 p. :ill., digital ; : 24 cm.;
Contained By:	Springer eBooks
Subject:	Nonvolatile random-access memory. -
Online resource:	http://dx.doi.org/10.1007/978-3-319-15290-5
ISBN:	9783319152905

Charge-trapping non-volatile memories.. Volume 1,. Basic and advanced devices
Charge-trapping non-volatile memories.Volume 1,Basic and advanced devices[electronic resource] /Basic and advanced devicesedited by Panagiotis Dimitrakis. - Cham :Springer International Publishing :2015. - ix, 211 p. :ill., digital ;24 cm.

Preface -- Introduction to NVM devices -- A synopsis on the state of the art of NAND memories -- Charge-trap memories with ion beam modified ONO stacks -- 3D NAND Flash Architectures -- Quantum dot Nonvolatile Memories -- Two-Terminal Organic Memories with Metal or Semiconductor Nanoparticles.

This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.

ISBN: 9783319152905

Standard No.: 10.1007/978-3-319-15290-5doiSubjects--Topical Terms:

1028833
Nonvolatile random-access memory.

LC Class. No.: TK7895.M4

Dewey Class. No.: 620.5

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520 $a This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.
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