國立虎尾科技大學 |

Surface Phase Stability and Surfactant Behavior on InAsSb.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Surface Phase Stability and Surfactant Behavior on InAsSb./
Author:	Anderson, Evan M.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2017,
Description:	135 p.
Notes:	Source: Dissertation Abstracts International, Volume: 78-11(E), Section: B.
Contained By:	Dissertation Abstracts International78-11B(E).
Subject:	Materials science. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10612092
ISBN:	9781369902266

Surface Phase Stability and Surfactant Behavior on InAsSb.
Anderson, Evan M.

Surface Phase Stability and Surfactant Behavior on InAsSb. - Ann Arbor : ProQuest Dissertations & Theses, 2017 - 135 p.

Source: Dissertation Abstracts International, Volume: 78-11(E), Section: B.

Thesis (Ph.D.)--University of Michigan, 2017.

InAsSb and related III-As/III-Sb heterostructures are of technological interest for applications in long wavelength infrared optoelectronic devices. However, there remain challenges to growing high quality material for these devices due to the complex interaction between As and Sb. While this interaction has been the subject of intense study, little work has focused on how As and Sb behave at the material surface with even fewer investigations into the atomic scale details of the InAsSb surface. This is a major gap in current knowledge because these materials are typically grown via vapor deposition methods, one atomic layer at a time. Thus, all processes impacting the growth of the crystal and its resultant properties occur at the surface. Despite this, the atomic scale details of the surface phases and processes impacting the Sb-As interaction have not previously been reported. This dissertation investigates the surface As-Sb interaction at an atomistic scale and its modification through different surface chemistry to be used as a guide for future experiments to improve the quality InAsSb of heterostructures by manipulating the surface phase during growth. In order to accomplish this, first principles calculations and experiments are used to investigate this system from three complimentary vantage points. First, the influence of Sb on the InAs surface and the stable surface phases of this system are investigated. Next, a similar approach is used on the opposite compositional extreme of the InAsSb system: As on the surface of InSb. Finally, the interaction of As and Sb is modified by the use of Bi as a surfactant during growth of InAsSb films.

ISBN: 9781369902266Subjects--Topical Terms:

557839
Materials science.

Surface Phase Stability and Surfactant Behavior on InAsSb.
LDR:03814nam a2200301 4500 001 890717
005 20180727091502.5
008 180907s2017 ||||||||||||||||| ||eng d
020 $a 9781369902266
035 $a (MiAaPQ)AAI10612092
035 $a (MiAaPQ)umichrackham:000580
035 $a AAI10612092
040 $a MiAaPQ $c MiAaPQ
100 1 $a Anderson, Evan M. $3 1148586
245 1 0 $a Surface Phase Stability and Surfactant Behavior on InAsSb.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2017
300 $a 135 p.
500 $a Source: Dissertation Abstracts International, Volume: 78-11(E), Section: B.
500 $a Adviser: Joanna Mirecki Millunchick.
502 $a Thesis (Ph.D.)--University of Michigan, 2017.
520 $a InAsSb and related III-As/III-Sb heterostructures are of technological interest for applications in long wavelength infrared optoelectronic devices. However, there remain challenges to growing high quality material for these devices due to the complex interaction between As and Sb. While this interaction has been the subject of intense study, little work has focused on how As and Sb behave at the material surface with even fewer investigations into the atomic scale details of the InAsSb surface. This is a major gap in current knowledge because these materials are typically grown via vapor deposition methods, one atomic layer at a time. Thus, all processes impacting the growth of the crystal and its resultant properties occur at the surface. Despite this, the atomic scale details of the surface phases and processes impacting the Sb-As interaction have not previously been reported. This dissertation investigates the surface As-Sb interaction at an atomistic scale and its modification through different surface chemistry to be used as a guide for future experiments to improve the quality InAsSb of heterostructures by manipulating the surface phase during growth. In order to accomplish this, first principles calculations and experiments are used to investigate this system from three complimentary vantage points. First, the influence of Sb on the InAs surface and the stable surface phases of this system are investigated. Next, a similar approach is used on the opposite compositional extreme of the InAsSb system: As on the surface of InSb. Finally, the interaction of As and Sb is modified by the use of Bi as a surfactant during growth of InAsSb films.
520 $a The interaction between As and Sb is found to be driven through the formation of surface phases and Bi is found to alter this interaction. Phase diagrams of both Sb on InAs and As on InSb show that As and Sb are driven to intermix through the formation of alloyed surface phases. Additionally, these phases range from having bulk-like stoichiometry to being highly As or Sb rich for the full InAsSb compositional range, indicating that surface stoichiometry is a controllable parameter for InAsSb growth. Sb is shown to intermix with the InAs surface by roughening the surface in a process driven by a phase transition. This interaction between Sb and InAs is stronger than previously thought, which has implications for the crystal growth problem of compositional broadening of the interfaces of III-As/III-Sb heterostructures. Finally, applying Bi to the surface of InAsSb during growth shows that modifies the interaction between As and Sb by catalyzing the formation of InAs, which decreases Sb incorporation. The results of this dissertation lay the foundation for optimization of the crystal growth surface in order to improve the properties of InAsSb and arsenide/antimonide heterostructures.
590 $a School code: 0127.
650 4 $a Materials science. $3 557839
690 $a 0794
710 2 $a University of Michigan. $b Materials Science and Engineering. $3 1148587
773 0 $t Dissertation Abstracts International $g 78-11B(E).
790 $a 0127
791 $a Ph.D.
792 $a 2017
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10612092