國立虎尾科技大學 |

Electrical Properties of a Tube-in-a-Tube Semiconductor.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Electrical Properties of a Tube-in-a-Tube Semiconductor./
Author:	Ng, Allen Lee.
Description:	1 online resource (128 pages)
Notes:	Source: Dissertation Abstracts International, Volume: 78-11(E), Section: B.
Subject:	Materials science. -
Online resource:	click for full text (PQDT)
ISBN:	9780355060409

Electrical Properties of a Tube-in-a-Tube Semiconductor.
Ng, Allen Lee.

Electrical Properties of a Tube-in-a-Tube Semiconductor. - 1 online resource (128 pages)

Source: Dissertation Abstracts International, Volume: 78-11(E), Section: B.

Thesis (Ph.D.)--University of Maryland, College Park, 2017.

Includes bibliographical references

Tube-in-a-tube (Tube.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9780355060409Subjects--Topical Terms:

557839
Materials science.
Index Terms--Genre/Form:

554714
Electronic books.

Electrical Properties of a Tube-in-a-Tube Semiconductor.
LDR:03916ntm a2200493K 4500 001 914048
005 20180703084419.5
006 m o u
007 cr mn||||a|a||
008 190606s2017 xx obm 000 0 eng d
020 $a 9780355060409
035 $a (MiAaPQ)AAI10251940
035 $a (MiAaPQ)umd:17778
035 $a AAI10251940
040 $a MiAaPQ $b eng $c MiAaPQ
100 1 $a Ng, Allen Lee. $3 1187127
245 1 0 $a Electrical Properties of a Tube-in-a-Tube Semiconductor.
264 0 $c 2017
300 $a 1 online resource (128 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertation Abstracts International, Volume: 78-11(E), Section: B.
500 $a Adviser: YuHuang Wang.
502 $a Thesis (Ph.D.)--University of Maryland, College Park, 2017.
504 $a Includes bibliographical references
520 $a Tube-in-a-tube (Tube.
520 $a 2) nanostructures were synthesized through the outer-wallselective covalent functionalization of double-walled carbon nanotubes (DWCNTs) at high functional densities. Upon functionalization, the properties of individual walls within the structure decouple resulting in an electrically insulating functional outer tube while the inner tube retains exceptional CNT properties. The exceptional electrical properties of Tube.
520 $a 2 semiconductor structures weredemonstrated for applications that include molecular and biological sensors and patterning of CNTbased structures with electronic type specificity.
520 $a Tube.
520 $a 2 thin film transistor (TFT) sensors exhibited simultaneous ultrahighsensitivity and selectivity towards chemical and biological targets. Carboxylic acid terminated Tube.
520 $a 2 sensors displayed an NH3 sensitivity of 60 nM, whichis comparable with small molecule aqueous solution detection using state-of-the-art TFT sensors while simultaneously attaining 6,000 times higher chemical selectivity towards a variety of amine containing analyte molecules over carboxylic acids. Similarly, 23-base ii oligonucleotide terminated Tube.
520 $a 2 sensors demonstratedconcomitant sensitivity down to 5 nM towards their complementary sequence without amplification techniques and single mismatch selectivity without the use of a gate electrode. Unique sensor architectures can be designed with the requirement of a gate electrode, such as the creation of millimeter-scale point sensors.
520 $a The optical features and unique structural features of Tube.
520 $a 2thin films were also exploited to address the challenge of patterning CNT nanostructures with electronic type specificity. Patterned dot arrays and conductive pathways were created on an initially insulating Tube.
520 $a 2 thin filmby tuning the resonance of the direct-writing laser with the electronic type of the inner tube (i.e., metallic or semiconducting). The successful patterning of Tube.
520 $a 2 thin films was unambiguously confirmed with in situ Raman spectral imaging and electrical characterization.
520 $a Furthermore, a hybrid 2-D carbon nanostructure comprised of a functionalized graphene that covers a semiconducting (6,5) SWCNT network (fG/sSWCNT) was developed. The hybrid fG/sSWCNT nanostructure exhibits similar structural and electrical properties as a semiconducting Tube.
520 $a 2 thin film, but possessesa transconductance that is an order of magnitude larger than Tube.
520 $a 2 and ON/OFFratios as high as 5400 without the useful of further processing steps such as electrical breakdown.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Materials science. $3 557839
650 4 $a Chemistry. $3 593913
650 4 $a Engineering. $3 561152
655 7 $a Electronic books. $2 local $3 554714
690 $a 0794
690 $a 0485
690 $a 0537
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a University of Maryland, College Park. $b Chemistry. $3 1187128
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10251940 $z click for full text (PQDT)