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Modeling the Effects of Ion Strike D...

ProQuest Information and Learning Co.

Modeling the Effects of Ion Strike Displacement Damage on the 3D Reciprocal Space of Silicon.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Modeling the Effects of Ion Strike Displacement Damage on the 3D Reciprocal Space of Silicon./
Author:	Franco, Manuel Uriel.
Description:	1 online resource (46 pages)
Notes:	Source: Masters Abstracts International, Volume: 56-05.
Subject:	Nuclear engineering. -
Online resource:	click for full text (PQDT)
ISBN:	9780355076349

Modeling the Effects of Ion Strike Displacement Damage on the 3D Reciprocal Space of Silicon.
Franco, Manuel Uriel.

Modeling the Effects of Ion Strike Displacement Damage on the 3D Reciprocal Space of Silicon. - 1 online resource (46 pages)

Source: Masters Abstracts International, Volume: 56-05.

Thesis (M.S.)--Rensselaer Polytechnic Institute, 2017.

Includes bibliographical references

Silicon is the backbone to today's modern society and used in everything from children's toys to mission sensitive electronics in the form of semiconductors. It is because of its usefulness that silicon is extremely well studied, and has found applications in a variety of fields of study and harsh working environments.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2018

Mode of access: World Wide Web

ISBN: 9780355076349Subjects--Topical Terms:

655622
Nuclear engineering.
Index Terms--Genre/Form:

554714
Electronic books.

Modeling the Effects of Ion Strike Displacement Damage on the 3D Reciprocal Space of Silicon.
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100 1 $a Franco, Manuel Uriel. $3 1187228
245 1 0 $a Modeling the Effects of Ion Strike Displacement Damage on the 3D Reciprocal Space of Silicon.
264 0 $c 2017
300 $a 1 online resource (46 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Masters Abstracts International, Volume: 56-05.
500 $a Adviser: Wei Ji.
502 $a Thesis (M.S.)--Rensselaer Polytechnic Institute, 2017.
504 $a Includes bibliographical references
520 $a Silicon is the backbone to today's modern society and used in everything from children's toys to mission sensitive electronics in the form of semiconductors. It is because of its usefulness that silicon is extremely well studied, and has found applications in a variety of fields of study and harsh working environments.
520 $a Semiconductors see use in the depths of space and the interior of reactor containment building to name just two potential harsh working environments. In these environments, it is very important to predict the degradation exhibited by electronics due to radiation damage. This allows one to know when failure will occur or keep track of other potential problems. Currently the study of displacement damage effects on semiconductors due to ion strikes is focused on the research at the macroscale. Minimal work exists investigating the same phenomena at the microscale. This research aims to expand the available literature by modeling how diffraction peaks in reciprocal space change when a single ion strike occurs in single crystal silicon.
520 $a LAMMPS is a molecular dynamics code that will be used to model displacement damage due to ion strike at the atomistic level. It also generates virtual electron diffraction patterns to investigate the impact of radiation on reciprocal space. By characterizing the changes in peak broadening and peak shifting due to macro or micro strains, the planes in real space most affected by radiation damage are determined. In this study, it was found that in general low order planes are affected the most by peak broadening. In addition, high order planes are affected the most by peak shifting.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2018
538 $a Mode of access: World Wide Web
650 4 $a Nuclear engineering. $3 655622
650 4 $a Materials science. $3 557839
655 7 $a Electronic books. $2 local $3 554714
690 $a 0552
690 $a 0794
710 2 $a ProQuest Information and Learning Co. $3 1178819
710 2 $a Rensselaer Polytechnic Institute. $b Nuclear Engineering. $3 1187229
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10264869 $z click for full text (PQDT)

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