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Metal impurities in silicon- and germanium-based technologies = origin, characterization, control, and device impact /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Metal impurities in silicon- and germanium-based technologies/ by Cor Claeys, Eddy Simoen.
Reminder of title:	origin, characterization, control, and device impact /
Author:	Claeys, Cor.
other author:	Simoen, Eddy.
Published:	Cham :Springer International Publishing : : 2018.,
Description:	xxxiii, 438 p. :ill., digital ; : 24 cm.;
Contained By:	Springer eBooks
Subject:	Metals - Inclusions. -
Online resource:	https://doi.org/10.1007/978-3-319-93925-4
ISBN:	9783319939254

Metal impurities in silicon- and germanium-based technologies = origin, characterization, control, and device impact /
Claeys, Cor.

Metal impurities in silicon- and germanium-based technologiesorigin, characterization, control, and device impact /[electronic resource] :by Cor Claeys, Eddy Simoen. - Cham :Springer International Publishing :2018. - xxxiii, 438 p. :ill., digital ;24 cm. - Springer series in materials science,v.2700933-033X ;. - Springer series in materials science ;106..

Preface -- Introduction -- Basic Properties of Metals in Semiconductors -- Sources of Metals in Si and Ge Processing -- Characterization and Detection of Metals in Silicon and Germanium -- Electrical Activity of Metals in Si and Ge -- Impact of Metals on Silicon Devices and Circuits -- Gettering and Passivation of Metals in Silicon and Germanium -- Modeling and Simulation of Metals in Silicon and Germanium -- Conclusions.

This book gives a unique review of different aspects of metallic contaminations in Si and Ge-based semiconductors. All important metals are discussed including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on the electrical device performance. Several control and possible gettering approaches are addressed. The book is a reference for researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. It has an interdisciplinary nature by combining different disciplines such as material science, defect engineering, device processing, defect and device characterization and device physics and engineering.

ISBN: 9783319939254

Standard No.: 10.1007/978-3-319-93925-4doiSubjects--Topical Terms:

906202
Metals
--Inclusions.

LC Class. No.: TA459 / .C534 2018

Dewey Class. No.: 620.16

Metal impurities in silicon- and germanium-based technologies = origin, characterization, control, and device impact /
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505 0 $a Preface -- Introduction -- Basic Properties of Metals in Semiconductors -- Sources of Metals in Si and Ge Processing -- Characterization and Detection of Metals in Silicon and Germanium -- Electrical Activity of Metals in Si and Ge -- Impact of Metals on Silicon Devices and Circuits -- Gettering and Passivation of Metals in Silicon and Germanium -- Modeling and Simulation of Metals in Silicon and Germanium -- Conclusions.
520 $a This book gives a unique review of different aspects of metallic contaminations in Si and Ge-based semiconductors. All important metals are discussed including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on the electrical device performance. Several control and possible gettering approaches are addressed. The book is a reference for researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. It has an interdisciplinary nature by combining different disciplines such as material science, defect engineering, device processing, defect and device characterization and device physics and engineering.
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