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Ferroelectric-Gate Field Effect Transistor Memories = Device Physics and Applications /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Ferroelectric-Gate Field Effect Transistor Memories/ edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon.
Reminder of title:	Device Physics and Applications /
other author:	Park, Byung-Eun.
Description:	XVIII, 347 p. 254 illus., 150 illus. in color.online resource. :
Contained By:	Springer Nature eBook
Subject:	Electronic circuits. -
Online resource:	https://doi.org/10.1007/978-94-024-0841-6
ISBN:	9789402408416

Ferroelectric-Gate Field Effect Transistor Memories = Device Physics and Applications /
Ferroelectric-Gate Field Effect Transistor MemoriesDevice Physics and Applications /[electronic resource] :edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon. - 1st ed. 2016. - XVIII, 347 p. 254 illus., 150 illus. in color.online resource. - Topics in Applied Physics,1310303-4216 ;. - Topics in Applied Physics,121.

Operation Principle of One-Transistor Type Ferroelectric-gate Field Effect Transistors -- Practical Characteristics of Inorganic Ferroelectric-gate FETs -- Si-Based Ferroelectric-gate Field Effect Transistors -- Thin film-Based Ferroelectric-gate Field Effect Transistors -- Practical Characteristics of Organic Ferroelectric-gate FETs -- Si-Based Ferroelectric-gate Field Effect Transistors -- Thin film-Based Ferroelectric-gate Field Effect Transistors -- Ferroelectric-gate Field Effect Transistors with flexible substrates -- Applications and Future Prospects.

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

ISBN: 9789402408416

Standard No.: 10.1007/978-94-024-0841-6doiSubjects--Topical Terms:

563332
Electronic circuits.

LC Class. No.: TK7867-7867.5

Dewey Class. No.: 621.3815

Ferroelectric-Gate Field Effect Transistor Memories = Device Physics and Applications /
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