國立虎尾科技大學 |

Variation-Aware Advanced CMOS Devices and SRAM

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Variation-Aware Advanced CMOS Devices and SRAM/ by Changhwan Shin.
Author:	Shin, Changhwan.
Description:	VII, 140 p. 118 illus., 101 illus. in color.online resource. :
Contained By:	Springer Nature eBook
Subject:	Electronic circuits. -
Online resource:	https://doi.org/10.1007/978-94-017-7597-7
ISBN:	9789401775977

Variation-Aware Advanced CMOS Devices and SRAM
Shin, Changhwan.

Variation-Aware Advanced CMOS Devices and SRAM[electronic resource] /by Changhwan Shin. - 1st ed. 2016. - VII, 140 p. 118 illus., 101 illus. in color.online resource. - Springer Series in Advanced Microelectronics,561437-0387 ;. - Springer Series in Advanced Microelectronics,49.

1 Introduction and Overview -- 2 Understanding of Process-Induced Random Variation -- 3 Various Variation-Robust CMOS Device Designs -- 4 Applications to Static Random Access Memory (SRAM) -- 5 Conclusion.

This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM.

ISBN: 9789401775977

Standard No.: 10.1007/978-94-017-7597-7doiSubjects--Topical Terms:

563332
Electronic circuits.

LC Class. No.: TK7867-7867.5

Dewey Class. No.: 621.3815

Variation-Aware Advanced CMOS Devices and SRAM
LDR:02963nam a22004215i 4500 001 980003
003 DE-He213
005 20200704104934.0
007 cr nn 008mamaa
008 201211s2016 ne | s |||| 0|eng d
020 $a 9789401775977 $9 978-94-017-7597-7
024 7 $a 10.1007/978-94-017-7597-7 $2 doi
035 $a 978-94-017-7597-7
050 4 $a TK7867-7867.5
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
072 7 $a TJFC $2 thema
072 7 $a TJFD $2 thema
082 0 4 $a 621.3815 $2 23
100 1 $a Shin, Changhwan. $4 aut $4 http://id.loc.gov/vocabulary/relators/aut $3 1110803
245 1 0 $a Variation-Aware Advanced CMOS Devices and SRAM $h [electronic resource] / $c by Changhwan Shin.
250 $a 1st ed. 2016.
264 1 $a Dordrecht : $b Springer Netherlands : $b Imprint: Springer, $c 2016.
300 $a VII, 140 p. 118 illus., 101 illus. in color. $b online resource.
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
347 $a text file $b PDF $2 rda
490 1 $a Springer Series in Advanced Microelectronics, $x 1437-0387 ; $v 56
505 0 $a 1 Introduction and Overview -- 2 Understanding of Process-Induced Random Variation -- 3 Various Variation-Robust CMOS Device Designs -- 4 Applications to Static Random Access Memory (SRAM) -- 5 Conclusion.
520 $a This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM.
650 0 $a Electronic circuits. $3 563332
650 0 $a Semiconductors. $3 578843
650 0 $a Electronics. $3 596389
650 0 $a Microelectronics. $3 554956
650 1 4 $a Electronic Circuits and Devices. $3 782968
650 2 4 $a Circuits and Systems. $3 670901
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 670219
710 2 $a SpringerLink (Online service) $3 593884
773 0 $t Springer Nature eBook
776 0 8 $i Printed edition: $z 9789401775953
776 0 8 $i Printed edition: $z 9789401775960
776 0 8 $i Printed edition: $z 9789402413908
830 0 $a Springer Series in Advanced Microelectronics, $x 1437-0387 ; $v 49 $3 1262386
856 4 0 $u https://doi.org/10.1007/978-94-017-7597-7
912 $a ZDB-2-PHA
912 $a ZDB-2-SXP
950 $a Physics and Astronomy (SpringerNature-11651)
950 $a Physics and Astronomy (R0) (SpringerNature-43715)