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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion/ edited by Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni.
other author:	Meneghesso, Gaudenzio.
Description:	XIII, 232 p. 183 illus., 165 illus. in color.online resource. :
Contained By:	Springer Nature eBook
Subject:	Electronic circuits. -
Online resource:	https://doi.org/10.1007/978-3-319-77994-2
ISBN:	9783319779942

Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion[electronic resource] /edited by Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni. - 1st ed. 2018. - XIII, 232 p. 183 illus., 165 illus. in color.online resource. - Integrated Circuits and Systems,1558-9412. - Integrated Circuits and Systems,.

Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics -- Chapter2: Lateral GaN HEMT structures -- Chapter3: Vertical GaN Transistors for Power Electronics -- Chapter4: Reliability of GaN-based Power devices -- Chapter5: Validating GaN robustness -- Chapter6: Impact of Parasitics on GaN Based Power Conversion -- Chapter7: GaN in AC/DC Power Converters -- Chapter8: GaN in Switched Mode Power Amplifiers.

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

ISBN: 9783319779942

Standard No.: 10.1007/978-3-319-77994-2doiSubjects--Topical Terms:

563332
Electronic circuits.

LC Class. No.: TK7888.4

Dewey Class. No.: 621.3815

Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
LDR:02962nam a22004095i 4500 001 993418
003 DE-He213
005 20200702132405.0
007 cr nn 008mamaa
008 201225s2018 gw | s |||| 0|eng d
020 $a 9783319779942 $9 978-3-319-77994-2
024 7 $a 10.1007/978-3-319-77994-2 $2 doi
035 $a 978-3-319-77994-2
050 4 $a TK7888.4
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
072 7 $a TJFC $2 thema
082 0 4 $a 621.3815 $2 23
245 1 0 $a Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion $h [electronic resource] / $c edited by Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni.
250 $a 1st ed. 2018.
264 1 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2018.
300 $a XIII, 232 p. 183 illus., 165 illus. in color. $b online resource.
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
347 $a text file $b PDF $2 rda
490 1 $a Integrated Circuits and Systems, $x 1558-9412
505 0 $a Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics -- Chapter2: Lateral GaN HEMT structures -- Chapter3: Vertical GaN Transistors for Power Electronics -- Chapter4: Reliability of GaN-based Power devices -- Chapter5: Validating GaN robustness -- Chapter6: Impact of Parasitics on GaN Based Power Conversion -- Chapter7: GaN in AC/DC Power Converters -- Chapter8: GaN in Switched Mode Power Amplifiers.
520 $a This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.
650 0 $a Electronic circuits. $3 563332
650 0 $a Optical materials. $3 672695
650 0 $a Electronic materials. $3 1253592
650 1 4 $a Circuits and Systems. $3 670901
650 2 4 $a Electronic Circuits and Devices. $3 782968
650 2 4 $a Optical and Electronic Materials. $3 593919
700 1 $a Meneghesso, Gaudenzio. $4 edt $4 http://id.loc.gov/vocabulary/relators/edt $3 1204840
700 1 $a Meneghini, Matteo. $4 edt $4 http://id.loc.gov/vocabulary/relators/edt $3 1204841
700 1 $a Zanoni, Enrico. $4 edt $4 http://id.loc.gov/vocabulary/relators/edt $3 1204842
710 2 $a SpringerLink (Online service) $3 593884
773 0 $t Springer Nature eBook
776 0 8 $i Printed edition: $z 9783319779935
776 0 8 $i Printed edition: $z 9783319779959
776 0 8 $i Printed edition: $z 9783030085940
830 0 $a Integrated Circuits and Systems, $x 1558-9412 $3 1255009
856 4 0 $u https://doi.org/10.1007/978-3-319-77994-2
912 $a ZDB-2-ENG
912 $a ZDB-2-SXE
950 $a Engineering (SpringerNature-11647)
950 $a Engineering (R0) (SpringerNature-43712)