高電子遷移率電晶體.

氮化鋁鎵/氮化鎵二維異質接面結構之研究 = = The Study of AlGaN/GaN Two-Dimensional Heterojunction Structures / by: (Language materials, printed)

應用AlN異質結構提升GaN-based高電子遷移率電晶體之電性研究 = = Improving the Electrical Properties of GaN-based High Electron Mobility Transistors using AlN Heterostructure / by: (Language materials, printed)

應用二維電子氣之調製以提升增強型高電子遷移率電晶體元件性能之研究 = = Study on the Modulation of Two-Dimensional Electron Gas to Improve the Performance of Enhancement-mode High Electron Mobility Transistors / by: (Language materials, printed)

2DEG.

threshold voltage.

氮化鎵.

氮化鋁鎵.

AlGaN.

導通電阻.

on-resistance.

氮化鋁.

二維電子氣.

AlN.

氮化鎵磊晶層.

高電子遷移率電晶體.

Raman scattering.

HEMT.

GaN epilayer.

GaN.

臨界電壓.

拉曼散射.