國立虎尾科技大學 |

登入

回首頁

利用化學氣相沉積還原的雙金屬氧化物奈米晶體在前瞻微電子元件特性研究 = ...

Chin-Lung Cheng

利用化學氣相沉積還原的雙金屬氧化物奈米晶體在前瞻微電子元件特性研究 = Study of bimetallic oxide nanocrystal reduced by chemical-vapor-deposition on advancedmicroelectronic devices applications

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Study of bimetallic oxide nanocrystal reduced by chemical-vapor-deposition on advancedmicroelectronic devices applications
作者:	黃崧瑋,
其他作者:	鄭錦隆,
其他作者:	劉建惟,
其他團體作者:	國立虎尾科技大學
出版地:	[雲林縣]
出版者:	國立虎尾科技大學;
出版年:	民96[2007]
版本:	初版
面頁冊數:	135面圖,表 : 30公分;
標題:	微電子元件
標題:	CoxMoyO
電子資源:	http://140.130.12.251/ETD-db/ETD-search-c/view_etd?URN=etd-0522107-121711
摘要註:	本論文利用低溫化學氣相沉積法[Chemical Vapor Deposition (CVD)] 還原雙金屬氧化物奈米晶體深埋在高介電係數HfON層中，其雙金屬醋酸鹽溶液是以醋酸鈷[(CH3COOH)2Co4H2O]、醋酸鉬[(CH3COOH)2Mo]以及醋酸鐵[(CH3COOH)2Fe4H2O]之搭配組合，並以酒精當作溶液。藉由改變醋酸鹽重量百分比濃度、不同的醋酸鹽雙金屬組合、HfON之阻擋氧化層厚度（Blocking oxide）、不同的試片浸泡時間(Dip time)、利用滴落法以及HfON表面處理等條件，成長高效能雙金屬氧化物奈米晶體並應用於非揮發性記憶體元件。利用C-V量測CoxMoyO雙金屬氧化物奈米晶體非揮發性記憶體元件，在±5 V範圍的掃略下，可得到其遲滯範圍為700 mV，其可捕捉陷阱密度為1.1×1012cm-2。由SEM圖可觀察到CoxMoyO雙金屬氧化物奈米晶體表面密度為1×1011cm-2，而直徑為4-20 nm。由物性以及電性結果證實具備CoxMoyO雙金屬氧化物奈米晶體之非揮發性記憶體元件比具備FexCoyO或FexMoyO雙金屬氧化物之特性為佳。為了提高CoxMoyO雙金屬氧化物奈米晶體表面密度，採用滴落法以及鈦氧化物（TiOx）置入HfON表面，使得非揮發性記憶體元件特性得以進一步提高，又由研究發現在CoxMoyO, FexCoyO以及FexMoyO寫入特性皆是以電洞捕捉為主要驅動電荷。 In this thesis, the reduced bimetallic oxide nanocrystal (BONs) embedded in the hafnium oxynitride (HfON) high-k film have been developed by means of the low-temperature chemical-vapor-deposition (CVD) method. The bimetallic acetate solutions were prepared by dissolving the X-metal acetate (CH3COOH)2X and Y-metal acetate (CH3COOH)2Y (X, Y= Co or Mo, or Fe) into ethanol. By modulated the various weight percentage of the bimetallic acetate, the different acetates mixed solutions, the various thicknesses of the HfON blocking oxide, the various dip-coating times, the drop-coating and the HfON surface treatment, the high-quality BON can be achieved for the nonvolatile flash memory (NFM) devices applications. Capacitance-voltage (C-V) measurements estimate that a charge trap states density of 1.1 x 1012 cm-2 and a flatband voltage shift of 700 mV were achieved during the C-V hysteresis sweep at 5 V for memory devices with CoxMoyO BONs. Scanning electron microscopy image displays that the CoxMoyO BONs with a diameter of ~4-20 nm and a surface density of ~1 x 1011 cm-2 were obtained. The results also show that the electrical and surface characteristics of memory devices with CoxMoyO BONs are better than those of memory devices with FexCoyO or FexMoyO. The electrical and surface properties of nonvolatile memory devices with CoxMoyO BONs can be further improved by the drop techniques and the TiOx incorporated into HfON surface. The writing characteristics measurements illustrate that the memory effects of devices with CoxMoyO, FexCoyO, and FexMoyO as charge trapping layers are mainly due to the holes trapping.

利用化學氣相沉積還原的雙金屬氧化物奈米晶體在前瞻微電子元件特性研究 = Study of bimetallic oxide nanocrystal reduced by chemical-vapor-deposition on advancedmicroelectronic devices applications
黃, 崧瑋

利用化學氣相沉積還原的雙金屬氧化物奈米晶體在前瞻微電子元件特性研究 = Study of bimetallic oxide nanocrystal reduced by chemical-vapor-deposition on advancedmicroelectronic devices applications / 黃崧瑋撰 - 初版. - [雲林縣] : 國立虎尾科技大學, 民96[2007]. - 135面 ; 圖,表 ; 30公分.
參考書目：131-134面.
微電子元件CoxMoyO

鄭, 錦隆

利用化學氣相沉積還原的雙金屬氧化物奈米晶體在前瞻微電子元件特性研究 = Study of bimetallic oxide nanocrystal reduced by chemical-vapor-deposition on advancedmicroelectronic devices applications
LDR:04366nam0 2200265 450 001 540391
010 0 $b 平裝
100 $a 20090410h akaa0chia50020302ba
101 0 $a chi
102 $a cw
105 $a ak am 000yy
200 1 $a 利用化學氣相沉積還原的雙金屬氧化物奈米晶體在前瞻微電子元件特性研究 $d Study of bimetallic oxide nanocrystal reduced by chemical-vapor-deposition on advancedmicroelectronic devices applications $f 黃崧瑋撰
205 $a 初版
210 $a [雲林縣] $d 民96[2007] $c 國立虎尾科技大學
215 0 $a 135面 $c 圖,表 $d 30公分
314 $a 指導教授：鄭錦隆
320 $a 參考書目：131-134面
328 $a 碩士論文--國立虎尾科技大學機械與機電工程研究所
330 $a 本論文利用低溫化學氣相沉積法[Chemical Vapor Deposition (CVD)] 還原雙金屬氧化物奈米晶體深埋在高介電係數HfON層中，其雙金屬醋酸鹽溶液是以醋酸鈷[(CH3COOH)2Co4H2O]、醋酸鉬[(CH3COOH)2Mo]以及醋酸鐵[(CH3COOH)2Fe4H2O]之搭配組合，並以酒精當作溶液。藉由改變醋酸鹽重量百分比濃度、不同的醋酸鹽雙金屬組合、HfON之阻擋氧化層厚度（Blocking oxide）、不同的試片浸泡時間(Dip time)、利用滴落法以及HfON表面處理等條件，成長高效能雙金屬氧化物奈米晶體並應用於非揮發性記憶體元件。利用C-V量測CoxMoyO雙金屬氧化物奈米晶體非揮發性記憶體元件，在±5 V範圍的掃略下，可得到其遲滯範圍為700 mV，其可捕捉陷阱密度為1.1×1012cm-2。由SEM圖可觀察到CoxMoyO雙金屬氧化物奈米晶體表面密度為1×1011cm-2，而直徑為4-20 nm。由物性以及電性結果證實具備CoxMoyO雙金屬氧化物奈米晶體之非揮發性記憶體元件比具備FexCoyO或FexMoyO雙金屬氧化物之特性為佳。為了提高CoxMoyO雙金屬氧化物奈米晶體表面密度，採用滴落法以及鈦氧化物（TiOx）置入HfON表面，使得非揮發性記憶體元件特性得以進一步提高，又由研究發現在CoxMoyO, FexCoyO以及FexMoyO寫入特性皆是以電洞捕捉為主要驅動電荷。 In this thesis, the reduced bimetallic oxide nanocrystal (BONs) embedded in the hafnium oxynitride (HfON) high-k film have been developed by means of the low-temperature chemical-vapor-deposition (CVD) method. The bimetallic acetate solutions were prepared by dissolving the X-metal acetate (CH3COOH)2X and Y-metal acetate (CH3COOH)2Y (X, Y= Co or Mo, or Fe) into ethanol. By modulated the various weight percentage of the bimetallic acetate, the different acetates mixed solutions, the various thicknesses of the HfON blocking oxide, the various dip-coating times, the drop-coating and the HfON surface treatment, the high-quality BON can be achieved for the nonvolatile flash memory (NFM) devices applications. Capacitance-voltage (C-V) measurements estimate that a charge trap states density of 1.1 x 1012 cm-2 and a flatband voltage shift of 700 mV were achieved during the C-V hysteresis sweep at 5 V for memory devices with CoxMoyO BONs. Scanning electron microscopy image displays that the CoxMoyO BONs with a diameter of ~4-20 nm and a surface density of ~1 x 1011 cm-2 were obtained. The results also show that the electrical and surface characteristics of memory devices with CoxMoyO BONs are better than those of memory devices with FexCoyO or FexMoyO. The electrical and surface properties of nonvolatile memory devices with CoxMoyO BONs can be further improved by the drop techniques and the TiOx incorporated into HfON surface. The writing characteristics measurements illustrate that the memory effects of devices with CoxMoyO, FexCoyO, and FexMoyO as charge trapping layers are mainly due to the holes trapping.
510 1 $a Study of bimetallic oxide nanocrystal reduced by chemical-vapor-deposition on advancedmicroelectronic devices applications
610 0 $a 微電子元件 $a 鈷鉬氧化物 $a 鐵鈷氧化物 $a 鐵鉬氧化物 $a 雙金屬氧化物奈米晶體 $a 非揮發性記憶體
610 1 $a CoxMoyO $a FexCoyO $a FexMoyO $a bimetallic oxide nanocrystal $a microelectronics devices $a nonvolatile memory
681 $a 008.154M $b 4421
700 $a 黃 $b 崧瑋 $3 523844
702 $a 鄭 $b 錦隆 $3 485022
702 $a 劉 $b 建惟 $3 541153
712 $a 國立虎尾科技大學 $b 工業工程與管理究所 $3 523742
770 $a Sung-Wei Huang $3 586524
772 $a Chin-Lung Cheng $3 541150
772 $a Chien-Wei Liu $3 541154
801 0 $a cw $b 虎尾科技大學 $c 20071207 $g CCR
801 2 $a cw $b 虎尾科技大學 $c 20090410 $g CCR
856 7 $u http://140.130.12.251/ETD-db/ETD-search-c/view_etd?URN=etd-0522107-121711