國立虎尾科技大學 |

Hf-Based High-k Dielectrics = Process Development, Performance Characterization, and Reliability /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Hf-Based High-k Dielectrics/ by Young-Hee Kim, Jack C. Lee.
其他題名:	Process Development, Performance Characterization, and Reliability /
作者:	Kim, Young-Hee.
其他作者:	Lee, Jack C.
面頁冊數:	X, 92 p.online resource. :
Contained By:	Springer Nature eBook
標題:	Materials Science. -
電子資源:	https://doi.org/10.1007/978-3-031-02552-5
ISBN:	9783031025525

Hf-Based High-k Dielectrics = Process Development, Performance Characterization, and Reliability /
Kim, Young-Hee.

Hf-Based High-k DielectricsProcess Development, Performance Characterization, and Reliability /[electronic resource] :by Young-Hee Kim, Jack C. Lee. - 1st ed. 2005. - X, 92 p.online resource. - Synthesis Lectures on Solid State Materials and Devices,1932-1724. - Synthesis Lectures on Solid State Materials and Devices,.

Introduction -- Hard- and Soft-Breakdown Characteristics of Ultrathin HfO2 Under Dynamic and Constant Voltage Stress -- Impact of High Temperature Forming Gas and D2 Anneal on Reliability of HfO2 Gate Dielectrics -- Effect of Barrier Height and the Nature of Bilayer Structure of HfO2 with Dual Metal Gate Technology -- Bimodal Defect Generation Rate by Low Barrier Height and its Impact on Reliability Characteristics.

In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru–Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results from the polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdown may be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices.

ISBN: 9783031025525

Standard No.: 10.1007/978-3-031-02552-5doiSubjects--Topical Terms:

671087
Materials Science.

LC Class. No.: TK1-9971

Dewey Class. No.: 621.3

Hf-Based High-k Dielectrics = Process Development, Performance Characterization, and Reliability /
LDR:02776nam a22003735i 4500 001 1097467
003 DE-He213
005 20220601145729.0
007 cr nn 008mamaa
008 230315s2005 sz | s |||| 0|eng d
020 $a 9783031025525 $9 978-3-031-02552-5
024 7 $a 10.1007/978-3-031-02552-5 $2 doi
035 $a 978-3-031-02552-5
050 4 $a TK1-9971
072 7 $a THR $2 bicssc
072 7 $a TEC007000 $2 bisacsh
072 7 $a THR $2 thema
082 0 4 $a 621.3 $2 23
100 1 $a Kim, Young-Hee. $e author. $4 aut $4 http://id.loc.gov/vocabulary/relators/aut $3 1407314
245 1 0 $a Hf-Based High-k Dielectrics $h [electronic resource] : $b Process Development, Performance Characterization, and Reliability / $c by Young-Hee Kim, Jack C. Lee.
250 $a 1st ed. 2005.
264 1 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2005.
300 $a X, 92 p. $b online resource.
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
347 $a text file $b PDF $2 rda
490 1 $a Synthesis Lectures on Solid State Materials and Devices, $x 1932-1724
505 0 $a Introduction -- Hard- and Soft-Breakdown Characteristics of Ultrathin HfO2 Under Dynamic and Constant Voltage Stress -- Impact of High Temperature Forming Gas and D2 Anneal on Reliability of HfO2 Gate Dielectrics -- Effect of Barrier Height and the Nature of Bilayer Structure of HfO2 with Dual Metal Gate Technology -- Bimodal Defect Generation Rate by Low Barrier Height and its Impact on Reliability Characteristics.
520 $a In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru–Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results from the polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdown may be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices.
650 2 4 $a Materials Science. $3 671087
650 1 4 $a Electrical and Electronic Engineering. $3 1388937
650 0 $a Materials science. $3 557839
650 0 $a Electrical engineering. $3 596380
700 1 $a Lee, Jack C. $e author. $4 aut $4 http://id.loc.gov/vocabulary/relators/aut $3 1407315
710 2 $a SpringerLink (Online service) $3 593884
773 0 $t Springer Nature eBook
776 0 8 $i Printed edition: $z 9783031014246
776 0 8 $i Printed edition: $z 9783031036804
830 0 $a Synthesis Lectures on Solid State Materials and Devices, $x 1932-1724 $3 1407316
856 4 0 $u https://doi.org/10.1007/978-3-031-02552-5
912 $a ZDB-2-SXSC
950 $a Synthesis Collection of Technology (R0) (SpringerNature-85007)