國立虎尾科技大學 |

Language: English

Back

微中含量釕摻雜對於共濺鍍鈷釕合金薄膜特性 = = The Effect ...

詹鈞能

微中含量釕摻雜對於共濺鍍鈷釕合金薄膜特性 = = The Effect of Micro to Moderate Ruthenium Content on the Properties of Co-Sputtered Cobalt-Ruthenium Alloy Films /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	微中含量釕摻雜對於共濺鍍鈷釕合金薄膜特性 =/ 詹鈞能.
Reminder of title:	The Effect of Micro to Moderate Ruthenium Content on the Properties of Co-Sputtered Cobalt-Ruthenium Alloy Films /
remainder title:	The Effect of Micro to Moderate Ruthenium Content on the Properties of Co-Sputtered Cobalt-Ruthenium Alloy Films.
Author:	詹鈞能
Published:	雲林縣 :國立虎尾科技大學 , : 民113.07.,
Description:	[11], 122面 :圖, 表 ; : 30公分.;
Notes:	指導教授: 方昭訓.
Subject:	TiWN barrier layers. -
Online resource:	電子資源

微中含量釕摻雜對於共濺鍍鈷釕合金薄膜特性 = = The Effect of Micro to Moderate Ruthenium Content on the Properties of Co-Sputtered Cobalt-Ruthenium Alloy Films /
詹鈞能

微中含量釕摻雜對於共濺鍍鈷釕合金薄膜特性 =The Effect of Micro to Moderate Ruthenium Content on the Properties of Co-Sputtered Cobalt-Ruthenium Alloy Films /The Effect of Micro to Moderate Ruthenium Content on the Properties of Co-Sputtered Cobalt-Ruthenium Alloy Films.詹鈞能. - 初版. - 雲林縣 :國立虎尾科技大學 ,民113.07. - [11], 122面 :圖, 表 ;30公分.

指導教授: 方昭訓.

碩士論文--國立虎尾科技大學材料科學與工程系材料科學與綠色能源工程碩士班.

含參考書目.

半導體製程隨著摩爾定律不停進步，提升電晶體密度的同時，也微縮了金屬導線的尺寸，在小線寬的情況下電阻率(ρ_0)會急遽上升，高電阻金屬與介電層產生寄生電容，造成電阻電容延遲。同時小線寬會使電子在金屬導線中產生較大的散射，是由於電子在金屬中移動，碰到晶界或表面而導致的散射後產生二次電子，其行走的距離為電子的平均自由路徑。在現今常使用之銅金屬在中段製程中已無法滿足現今需求，由於銅在窄線寬下會提高本身的電阻率，以及其電子平均自由路徑(λ)較長，而鈷和釕較銅相比具有較高的抗電致遷移能力以及低平均自由路徑，因此被作為替代先進製程的材料。本研究以共濺鍍法製備鈷、鈷(釕)合金，控制釕的成份獲得不同成分的鈷(釕)合金，通過3d軌域的金屬釕來強化鈷連導線，摻入的釕含量從1.28 at.% 至45.23 at.%，並使用二氧化矽基板及氮化鈦鎢做黏附層與阻障層，同時比較常溫以及基板加熱400 oC，用以獲得最佳鈷、鈷(釕)合金薄膜。將鈷及鈷(釕)合金薄膜利用感應耦合電漿質譜儀進行成份分析，四點探針系統量測薄膜片電阻，X光繞射進行相結構分析，掃描式電子顯微鏡觀測薄膜形貌， X 光光電子能譜作為原子鍵結之判定，並量測 IV、和崩潰電壓薄膜電性。由以上實驗結果得知，在所有鈷釕合金薄膜中，經基板加熱400 oC 並經 700 oC退火5分鐘後，成分由低到高之電阻率分別為，純鈷 : 8.0 μΩ-cm ； Ru – 1.28 at.% : 26.2 μΩ-cm ； Ru – 1.68 at.% : 28.8 μΩ-cm ； Ru – 2.34 at.% : 42.9 μΩ-cm ； Ru – 16.85 at.% : 49.7 μΩ-cm ； Ru – 36.27 at.% : 59.3 μΩ-cm； Ru – 45.23 at.% : 41.6 μΩ-cm； Ru : 10.4 μΩ-cm ，最低之電阻率為 Ru – 1.28 at.% : 26.2 μΩ-cm。在中含量釕摻雜鈷釕合金薄膜，相較於無基板加熱，有基板加熱可維持薄膜形狀完整無破裂，且隨著釕含量的上升皆維持六方最密堆積結構，並皆為 HCP (100)、及 HCP (101)繞射面。在微量釕摻雜鈷釕合金薄膜中，Ru – 1.28 at.% 具有高熱穩定性，薄膜完整無破裂。.

(平裝)Subjects--Topical Terms:

1450188
TiWN barrier layers.

微中含量釕摻雜對於共濺鍍鈷釕合金薄膜特性 = = The Effect of Micro to Moderate Ruthenium Content on the Properties of Co-Sputtered Cobalt-Ruthenium Alloy Films /
LDR:06324cam a2200241 i 4500 001 1129943
008 241015s2024 ch ak erm 000 0 chi d
035 $a (THES)112NYPI0159024
040 $a NFU $b chi $c NFU $e CCR
041 0 # $a chi $b chi $b eng
084 $a 008.152M $b 2782 113 $2 ncsclt
100 1 $a 詹鈞能 $3 1448982
245 1 0 $a 微中含量釕摻雜對於共濺鍍鈷釕合金薄膜特性 = $b The Effect of Micro to Moderate Ruthenium Content on the Properties of Co-Sputtered Cobalt-Ruthenium Alloy Films / $c 詹鈞能.
246 1 1 $a The Effect of Micro to Moderate Ruthenium Content on the Properties of Co-Sputtered Cobalt-Ruthenium Alloy Films.
250 $a 初版.
260 # $a 雲林縣 : $b 國立虎尾科技大學 , $c 民113.07.
300 $a [11], 122面 : $b 圖, 表 ; $c 30公分.
500 $a 指導教授: 方昭訓.
500 $a 學年度: 112.
502 $a 碩士論文--國立虎尾科技大學材料科學與工程系材料科學與綠色能源工程碩士班.
504 $a 含參考書目.
520 3 $a 半導體製程隨著摩爾定律不停進步，提升電晶體密度的同時，也微縮了金屬導線的尺寸，在小線寬的情況下電阻率(ρ_0)會急遽上升，高電阻金屬與介電層產生寄生電容，造成電阻電容延遲。同時小線寬會使電子在金屬導線中產生較大的散射，是由於電子在金屬中移動，碰到晶界或表面而導致的散射後產生二次電子，其行走的距離為電子的平均自由路徑。在現今常使用之銅金屬在中段製程中已無法滿足現今需求，由於銅在窄線寬下會提高本身的電阻率，以及其電子平均自由路徑(λ)較長，而鈷和釕較銅相比具有較高的抗電致遷移能力以及低平均自由路徑，因此被作為替代先進製程的材料。本研究以共濺鍍法製備鈷、鈷(釕)合金，控制釕的成份獲得不同成分的鈷(釕)合金，通過3d軌域的金屬釕來強化鈷連導線，摻入的釕含量從1.28 at.% 至45.23 at.%，並使用二氧化矽基板及氮化鈦鎢做黏附層與阻障層，同時比較常溫以及基板加熱400 oC，用以獲得最佳鈷、鈷(釕)合金薄膜。將鈷及鈷(釕)合金薄膜利用感應耦合電漿質譜儀進行成份分析，四點探針系統量測薄膜片電阻，X光繞射進行相結構分析，掃描式電子顯微鏡觀測薄膜形貌， X 光光電子能譜作為原子鍵結之判定，並量測 IV、和崩潰電壓薄膜電性。由以上實驗結果得知，在所有鈷釕合金薄膜中，經基板加熱400 oC 並經 700 oC退火5分鐘後，成分由低到高之電阻率分別為，純鈷 : 8.0 μΩ-cm ； Ru – 1.28 at.% : 26.2 μΩ-cm ； Ru – 1.68 at.% : 28.8 μΩ-cm ； Ru – 2.34 at.% : 42.9 μΩ-cm ； Ru – 16.85 at.% : 49.7 μΩ-cm ； Ru – 36.27 at.% : 59.3 μΩ-cm； Ru – 45.23 at.% : 41.6 μΩ-cm； Ru : 10.4 μΩ-cm ，最低之電阻率為 Ru – 1.28 at.% : 26.2 μΩ-cm。在中含量釕摻雜鈷釕合金薄膜，相較於無基板加熱，有基板加熱可維持薄膜形狀完整無破裂，且隨著釕含量的上升皆維持六方最密堆積結構，並皆為 HCP (100)、及 HCP (101)繞射面。在微量釕摻雜鈷釕合金薄膜中，Ru – 1.28 at.% 具有高熱穩定性，薄膜完整無破裂。.
520 3 $a The semiconductor manufacturing process continues to advance with Moores Law, increasing transistor density while also shrinking the size of metal wires. Under conditions of narrow line widths, resistivity (ρ0) rises sharply, and high-resistance metals cause higher parasitic capacitance with dielectric layers, leading to resistive-capacitive delays. Additionally, nano wires cause greater electron scattering in metal wires, as electrons moving through the metal encounter grain boundaries or surfaces, resulting in secondary electrons. The distance traveled by these secondary electrons is determined by the average free path of the electrons. Currently, copper, commonly used in the middle-of-line, can no longer meet todays demands, as its resistivity increases under narrow line widths and its average free path (λ) is relatively long. In contrast, cobalt and ruthenium exhibit higher resistance to electromigration and shorter average free paths compared to copper, making them suitable materials for advanced process replacements. This study employed a co-sputtering method to prepare cobalt and cobalt-ruthenium alloys, controlling the ruthenium composition to obtain different compositions of cobalt-ruthenium alloys. The ruthenium content ranged from 1.28 at.% to 45.23 at.%. Using Si/SiO2 substrates with TiWN were used as adhesion and barrier layers, respectively. The study compared room temperature and substrate heating at 400oC to obtain the optimal cobalt and cobalt-ruthenium alloy films. The composition analysis of the cobalt and cobalt-ruthenium alloy films was conducted using inductively coupled plasma mass spectrometry. The film resistance was measured using a four-point probe, X-ray diffraction was employed for structural analysis, scanning electron microscopy was utilized for observing film morphology, X-ray photoelectron spectroscopy was employed for atomic bonding determination, and film electrical properties such as IV, and breakdown voltage were measured. Above experimental results, it is known that among all cobalt-ruthenium alloy films, after heating the substrate to 400 °C and annealing at 700 °C for 5 minutes, the resistivity from low to high is as follows pure cobalt : 8.0 μΩ-cm ; Ru – 1.28 at.% : 26.2 μΩ-cm ; Ru – 1.68 at.% : 28.8 μΩ-cm ; Ru – 2.34 at.% : 42.9 μΩ-cm ; Ru – 16.85 at.% : 49.7 μΩ-cm ; Ru – 36.27 at.% : 59.3 μΩ-cm ; Ru – 45.23 at.% : 41.6 μΩ-cm ; Ru : 10.4 μΩ-cm. The lowest resistivity is Ru – 1.28 at.% : 26.2 μΩ-cm. In cobalt-ruthenium alloy films with medium ruthenium doping, compared to those without substrate heating, heating the substrate maintains the integrity of the film without cracking, and as the ruthenium content increases, the hexagonal close-packed structure is maintained, with HCP (100) and HCP (101) diffraction planes present. In the micro ruthenium-doped cobalt-ruthenium alloy films, Ru – 1.28 at.% exhibits high thermal stability, with the film remaining intact and crack-free..
563 $a (平裝)
650 # 4 $a TiWN barrier layers. $3 1450188
650 # 4 $a interconnects. $3 1245710
650 # 4 $a cobalt-ruthenium alloys. $3 1450187
650 # 4 $a magnetron Co-Sputtering. $3 1450186
650 # 4 $a 氮化鈦鎢阻障層. $3 1450185
650 # 4 $a 連導線. $3 1011310
650 # 4 $a 鈷釕合金薄膜. $3 1245706
650 # 4 $a 磁控共濺鍍. $3 1450184
856 7 # $u https://handle.ncl.edu.tw/11296/urc6ts $z 電子資源 $2 http