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Nanometer variation-tolerant SRAM = ...
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Abu-Rahma, Mohamed H.
Nanometer variation-tolerant SRAM = circuits and statistical design for yield /
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
Nanometer variation-tolerant SRAM/ by Mohamed H. Abu-Rahma, Mohab Anis.
其他題名:
circuits and statistical design for yield /
作者:
Abu-Rahma, Mohamed H.
其他作者:
Anis, Mohab.
出版者:
New York, NY :Springer New York : : 2013.,
面頁冊數:
xvi, 170 p. :ill., digital ; : 24 cm.;
Contained By:
Springer eBooks
標題:
Random access memory. -
電子資源:
http://dx.doi.org/10.1007/978-1-4614-1749-1
ISBN:
9781461417491 (electronic bk.)
Nanometer variation-tolerant SRAM = circuits and statistical design for yield /
Abu-Rahma, Mohamed H.
Nanometer variation-tolerant SRAM
circuits and statistical design for yield /[electronic resource] :by Mohamed H. Abu-Rahma, Mohab Anis. - New York, NY :Springer New York :2013. - xvi, 170 p. :ill., digital ;24 cm.
ISBN: 9781461417491 (electronic bk.)Subjects--Topical Terms:
680567
Random access memory.
LC Class. No.: TK7895.M4 / A28 2013
Dewey Class. No.: 621.3973
Nanometer variation-tolerant SRAM = circuits and statistical design for yield /
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