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Nanometer variation-tolerant SRAM = ...
~
Abu-Rahma, Mohamed H.
Nanometer variation-tolerant SRAM = circuits and statistical design for yield /
Record Type:
Language materials, printed : Monograph/item
Title/Author:
Nanometer variation-tolerant SRAM/ by Mohamed H. Abu-Rahma, Mohab Anis.
Reminder of title:
circuits and statistical design for yield /
Author:
Abu-Rahma, Mohamed H.
other author:
Anis, Mohab.
Published:
New York, NY :Springer New York : : 2013.,
Description:
xvi, 170 p. :ill., digital ; : 24 cm.;
Contained By:
Springer eBooks
Subject:
Random access memory. -
Online resource:
http://dx.doi.org/10.1007/978-1-4614-1749-1
ISBN:
9781461417491 (electronic bk.)
Nanometer variation-tolerant SRAM = circuits and statistical design for yield /
Abu-Rahma, Mohamed H.
Nanometer variation-tolerant SRAM
circuits and statistical design for yield /[electronic resource] :by Mohamed H. Abu-Rahma, Mohab Anis. - New York, NY :Springer New York :2013. - xvi, 170 p. :ill., digital ;24 cm.
ISBN: 9781461417491 (electronic bk.)Subjects--Topical Terms:
680567
Random access memory.
LC Class. No.: TK7895.M4 / A28 2013
Dewey Class. No.: 621.3973
Nanometer variation-tolerant SRAM = circuits and statistical design for yield /
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circuits and statistical design for yield /
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Engineering (Springer-11647)
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