Random access memory.
Overview
| Works: | 12 works in 7 publications in 7 languages | |
|---|---|---|
Titles
Polarization and Switching Dynamics Study of Ferroelectric Hafnium Zirconium Oxide for Feram and Fefet Applications.
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(Language materials, manuscript)
Hafnium Oxide Based Ferroelectric Materials for Memory Applications.
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(Language materials, manuscript)
CMOS SRAM circuit design and parametric test in nano-scaled technologies = process-aware SRAM design and test /
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(Language materials, printed)
SRAM design for wireless sensor networks = energy efficient and variability resilient techniques /
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(Language materials, printed)
Green computing with emerging memory = low-power computation for social innovation /
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(Language materials, printed)
Nanometer variation-tolerant SRAM = circuits and statistical design for yield /
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(Language materials, printed)
Formation of KNbO3 thin films for self-powered ReRAM devices and artificial synapses
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(Language materials, printed)
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