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Hot Carrier Degradation in Semiconductor Devices

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Hot Carrier Degradation in Semiconductor Devices/ edited by Tibor Grasser.
其他作者:	Grasser, Tibor.
面頁冊數:	X, 517 p. 352 illus., 253 illus. in color.online resource. :
Contained By:	Springer Nature eBook
標題:	Electronic circuits. -
電子資源:	https://doi.org/10.1007/978-3-319-08994-2
ISBN:	9783319089942

Hot Carrier Degradation in Semiconductor Devices
Hot Carrier Degradation in Semiconductor Devices[electronic resource] /edited by Tibor Grasser. - 1st ed. 2015. - X, 517 p. 352 illus., 253 illus. in color.online resource.

Part I: Beyond Lucky Electrons -- From Atoms to Circuits: Theoretical and Empirical Modeling of Hot Carrier Degradation -- The Energy Driven Hot Carrier Model -- Hot-Carrier Degradation in Decananometer -- Physics-based Modeling of Hot-carrier Degradation -- The Spherical Harmonics Expansion Method for Assessing Hot Carrier Degradation -- Recovery from Hot Carrier Induced Degradation Through Temperature Treatment -- Characterization of MOSFET Interface States Using the Charge Pumping Technique -- Part II: CMOS and Beyond -- Channel Hot Carriers in SiGe and Ge pMOSFETs -- Channel Hot Carrier Degradation and Self-Heating Effects in FinFETs -- Characterization and Modeling of High-Voltage LDMOS Transistors -- Compact modelling of the Hot-carrier Degradation of Integrated HV MOSFETs -- Hot-Carrier Degradation in Silicon-Germanium Heterojunction Bipolar Transistors.

This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance. • Describes the intricacies of hot carrier degradation in modern semiconductor technologies; • Covers the entire hot carrier degradation phenomenon, including topics such as characterization, carrier transport, carrier-defect interaction, technological impact, circuit impact, etc.; • Enables detailed understanding of carrier transport, interaction of the carrier ensemble with the defect precursors, and an accurate assessment of how the newly created defects impact the device performance. • Covers modeling issues starting from detailed physics-based TCAD approaches up to efficient SPICE-compatible compact models. “Tibor Grasser and the authors of Hot Carrier Degradation in Semiconductor Devices have made a major contribution to the field of hot-carrier degradation. I am emeritus since 2006 and believe that, after reading these great chapters, I could work again at the cutting edge of hot-carrier transport, from the basic physics to modern device function and from compact modeling to detailed Monte Carlo simulations. This is a must read for anyone interested in the reliability of semiconductor devices.” Karl Hess Swanlund Professor Emeritus University of Illinois, USA “Very few books can be found with special focus on microelectronics reliability. Written by noted experts in the field, this book offers a revealing look at various aspects of the hot carrier effect and associated device degradations. It provides a valuable reference on hot carrier related physics, experimental measurements, modeling, and practical demonstration on state-of-the-art devices. Engineering professionals, researchers, and students can use this book to save time and learn from the experts, with a quick overview of an important class of semiconductor devices and focus on device reliability physics.” Steve Chung Chair Professor National Chiao Tung University, Taiwan.

ISBN: 9783319089942

Standard No.: 10.1007/978-3-319-08994-2doiSubjects--Topical Terms:

563332
Electronic circuits.

LC Class. No.: TK7888.4

Dewey Class. No.: 621.3815

Hot Carrier Degradation in Semiconductor Devices
LDR:04651nam a22003975i 4500 001 967605
003 DE-He213
005 20200702004544.0
007 cr nn 008mamaa
008 201211s2015 gw | s |||| 0|eng d
020 $a 9783319089942 $9 978-3-319-08994-2
024 7 $a 10.1007/978-3-319-08994-2 $2 doi
035 $a 978-3-319-08994-2
050 4 $a TK7888.4
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
072 7 $a TJFC $2 thema
082 0 4 $a 621.3815 $2 23
245 1 0 $a Hot Carrier Degradation in Semiconductor Devices $h [electronic resource] / $c edited by Tibor Grasser.
250 $a 1st ed. 2015.
264 1 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2015.
300 $a X, 517 p. 352 illus., 253 illus. in color. $b online resource.
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
347 $a text file $b PDF $2 rda
505 0 $a Part I: Beyond Lucky Electrons -- From Atoms to Circuits: Theoretical and Empirical Modeling of Hot Carrier Degradation -- The Energy Driven Hot Carrier Model -- Hot-Carrier Degradation in Decananometer -- Physics-based Modeling of Hot-carrier Degradation -- The Spherical Harmonics Expansion Method for Assessing Hot Carrier Degradation -- Recovery from Hot Carrier Induced Degradation Through Temperature Treatment -- Characterization of MOSFET Interface States Using the Charge Pumping Technique -- Part II: CMOS and Beyond -- Channel Hot Carriers in SiGe and Ge pMOSFETs -- Channel Hot Carrier Degradation and Self-Heating Effects in FinFETs -- Characterization and Modeling of High-Voltage LDMOS Transistors -- Compact modelling of the Hot-carrier Degradation of Integrated HV MOSFETs -- Hot-Carrier Degradation in Silicon-Germanium Heterojunction Bipolar Transistors.
520 $a This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance. • Describes the intricacies of hot carrier degradation in modern semiconductor technologies; • Covers the entire hot carrier degradation phenomenon, including topics such as characterization, carrier transport, carrier-defect interaction, technological impact, circuit impact, etc.; • Enables detailed understanding of carrier transport, interaction of the carrier ensemble with the defect precursors, and an accurate assessment of how the newly created defects impact the device performance. • Covers modeling issues starting from detailed physics-based TCAD approaches up to efficient SPICE-compatible compact models. “Tibor Grasser and the authors of Hot Carrier Degradation in Semiconductor Devices have made a major contribution to the field of hot-carrier degradation. I am emeritus since 2006 and believe that, after reading these great chapters, I could work again at the cutting edge of hot-carrier transport, from the basic physics to modern device function and from compact modeling to detailed Monte Carlo simulations. This is a must read for anyone interested in the reliability of semiconductor devices.” Karl Hess Swanlund Professor Emeritus University of Illinois, USA “Very few books can be found with special focus on microelectronics reliability. Written by noted experts in the field, this book offers a revealing look at various aspects of the hot carrier effect and associated device degradations. It provides a valuable reference on hot carrier related physics, experimental measurements, modeling, and practical demonstration on state-of-the-art devices. Engineering professionals, researchers, and students can use this book to save time and learn from the experts, with a quick overview of an important class of semiconductor devices and focus on device reliability physics.” Steve Chung Chair Professor National Chiao Tung University, Taiwan.
650 0 $a Electronic circuits. $3 563332
650 0 $a Electronics. $3 596389
650 0 $a Microelectronics. $3 554956
650 1 4 $a Circuits and Systems. $3 670901
650 2 4 $a Electronic Circuits and Devices. $3 782968
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 670219
700 1 $a Grasser, Tibor. $4 edt $4 http://id.loc.gov/vocabulary/relators/edt $3 1021063
710 2 $a SpringerLink (Online service) $3 593884
773 0 $t Springer Nature eBook
776 0 8 $i Printed edition: $z 9783319089935
776 0 8 $i Printed edition: $z 9783319089959
776 0 8 $i Printed edition: $z 9783319359120
856 4 0 $u https://doi.org/10.1007/978-3-319-08994-2
912 $a ZDB-2-ENG
912 $a ZDB-2-SXE
950 $a Engineering (SpringerNature-11647)
950 $a Engineering (R0) (SpringerNature-43712)