電漿增強化學氣相沉積法.

以電漿增強化學氣相沉積法製備氮氧化矽氣體阻障層之研究 = = A Study on the Preparation of Silicon Oxynitride Gas Barrier by Using Plasma Enhanced Chemical Vapor Deposition / by: (書目-語言資料,印刷品)

可撓式塑膠基板上製備有機/無機氮氧化矽多層氣體阻障層及其機械撓曲特性之研究 = = A Study on Mechanical Flexibility of Silicon Oxynitride and Organic/inorganic Multilayered Barrier Structures Deposited on Flexible Plastic Substrates / by: (書目-語言資料,印刷品)

氣體阻障層製備於具底角優化之底切圖案化表面之研究 = = A Study on the Preparation of a Gas Barrier Coated on Optimization Undercut Pattern Surface / by: (書目-語言資料,印刷品)

氣體阻障層結構具底切圖案化光阻表面覆蓋性及機械撓曲特性之研究 = = A Study on the Step Coverage and Mechanical Flexibility of the Gas Barrier Structure deposited onto the Photoresist Surface with Undercut Pattern / by: (書目-語言資料,印刷品)

電漿增強化學氣相沉積法.

silicon oxynitride.

快速電漿沉積.

無機氮氧化矽.

階梯覆蓋性.

inorganic silicon oxynitride.

silicon oxide.

水氣滲透率.

step coverage.

氮氧化矽.

WVTR.

gas barrier layer.

selective deposition.

bending reliability.

Taguchi method.

二氧化矽.

選擇性沉積.

water vapor permeability.

rapid plasma deposition.

撓曲測試.

有機矽基薄膜.

under-cut patterned.

plasma enhanced chemical vapor deposition.

氣體阻障層.

底切圖案化.

田口法.

plasma-enhanced chemical vapor deposition.

organosilicon.