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調控鎳開路電位時間置換低電位沉積鈷製備鈷鎳合金薄膜特性 = = Co(N...
陳坤煌

 

  • 調控鎳開路電位時間置換低電位沉積鈷製備鈷鎳合金薄膜特性 = = Co(Ni) Film Prepared by Controlling Open Circuit Potential Duration of Ni During Surface-limited Redox Replacement of the Underpotential Deposited Co /
  • Record Type: Language materials, printed : Monograph/item
    Title/Author: 調控鎳開路電位時間置換低電位沉積鈷製備鈷鎳合金薄膜特性 =/ 陳坤煌.
    Reminder of title: Co(Ni) Film Prepared by Controlling Open Circuit Potential Duration of Ni During Surface-limited Redox Replacement of the Underpotential Deposited Co /
    remainder title: Co(Ni) Film Prepared by Controlling Open Circuit Potential Duration of Ni During Surface-limited Redox Replacement of the Underpotential Deposited Co.
    Author: 陳坤煌
    Published: 雲林縣 :國立虎尾科技大學 , : 民110.07.,
    Description: [12], 130葉 :圖, 表 ; : 30公分.;
    Notes: 指導教授: 方昭訓.
    Subject: Surface-Limited Redox Reaction. -
    Online resource: 電子資源
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T011616 圖書館B1F 博碩士論文專區 不流通(NON_CIR) 碩士論文(TM) TM 008.152M 7549:2 110 一般使用(Normal) On shelf 0
  • 1 records • Pages 1 •
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