Surface-Limited Redox Reaction.

銅離子置換低電位沉積錳原子層製備銅錳合金薄膜特性 = = Cu(Mn) Alloy Thin Film Prepared by Using Cu to Replace Underpotential Deposited Mn Through Surface-limited Redox Replacement / by: (書目-語言資料,印刷品)

調控Ru開路電位時間置換低電位沉積Co單層製備CoRu合金薄膜特性 = = Co(Ru) Alloy Thin Film Prepared by Controlling Ru-OCP Time during SLRR to replace the Co-UPD / by: (書目-語言資料,印刷品)

調控鎳開路電位時間置換低電位沉積鈷製備鈷鎳合金薄膜特性 = = Co(Ni) Film Prepared by Controlling Open Circuit Potential Duration of Ni During Surface-limited Redox Replacement of the Underpotential Deposited Co / by: (書目-語言資料,印刷品)

表面侷限氧化還原反應釕置換低電位沉積鈷製備釕鈷合金薄膜特性 = = Ru(Co) Thin Film Prepared by Underpotential Deposition Co and Surface-limited Redox Replacement Ru / by: (書目-語言資料,印刷品)

Electrochemical Atomic Layer Deposition.

Self-Forming Barrier Layer.

鈷鎳合金薄膜.

低電位沉積.

鈷釕合金薄膜.

Surface-Limited Redox Reaction.

Cu(Mn) alloy thin film.

表面侷限氧化還原反應.

interconnects.

Co(Ni) alloy films.

Cu(Mn)合金薄膜.

Underpotential Deposition.

EC-ALD.

自形成阻障層.

連導線.

釕鈷合金薄膜.

Ru(Co) alloy thin films.

電化學原子層沉積.

Co(Ru) alloy films.

表面侷限氧化還原置換.

underpotential Deposition.

Interconnects.