interconnects.

調控Ru開路電位時間置換低電位沉積Co單層製備CoRu合金薄膜特性 = = Co(Ru) Alloy Thin Film Prepared by Controlling Ru-OCP Time during SLRR to replace the Co-UPD / by: (Language materials, printed)

電化學共沉積製備微量摻雜之鈷磷合金薄膜應用於連導線之研究 = = Electrochemical co-deposition of Lightly Doped Co(P) Alloy Thin Films for Application in Interconnects / by: (Language materials, printed)

電化學沉積Co(P)合金薄膜與自組裝單層整合 = = Integration of Electrochemically Deposited Co(P) Thin Film and Self-Assembled Monolayers / by: (Language materials, printed)

表面侷限氧化還原反應釕置換低電位沉積鈷製備釕鈷合金薄膜特性 = = Ru(Co) Thin Film Prepared by Underpotential Deposition Co and Surface-limited Redox Replacement Ru / by: (Language materials, printed)

共濺鍍與電化學共沉積Co-Ru合金薄膜之特性 = = Characteristics of Co-Ru Alloy Thin Films Prepared by Co-sputtering and Electrochemical Co-deposition / by: (Language materials, printed)

微中含量釕摻雜對於共濺鍍鈷釕合金薄膜特性 = = The Effect of Micro to Moderate Ruthenium Content on the Properties of Co-Sputtered Cobalt-Ruthenium Alloy Films / by: (Language materials, printed)

Electrochemical Atomic Layer Deposition.

Self-Forming Barrier Layer.

electrochemical co-deposition.

低電位沉積.

鈷釕合金薄膜.

鈷磷合金薄膜.

Co(P) thin film.

Surface-Limited Redox Reaction.

氮化鈦鎢阻障層.

磁控共濺鍍.

全濕式電化學沈積.

表面侷限氧化還原反應.

釕鈷合金薄膜.

Ru(Co) alloy thin films.

電化學原子層沉積.

互連導線.

co-sputter.

半導體互連導線.

Co(Ru) alloy films.

表面侷限氧化還原置換.

electrochemical deposition.

underpotential Deposition.

cobalt-ruthenium alloys.

interconnects.

Self assembled monolayers (SAM).

Co(P)薄膜.

共濺鍍.

magnetron Co-Sputtering.

Underpotential Deposition.

連導線.

Co-Ru alloy thin film.

電化學共沉積.

自組裝單層.

電化學沉積.

TiWN barrier layers.