低電位沉積.
Overview
| Works: | 9 works in 8 publications in 8 languages | |
|---|---|---|
Titles
電化學原子層沉積製備銅銀合金薄膜於連導線應用之特性探討 = = Preparation and Characterisitics of Electrochemical Atomic Layer Deposited Copper-Silver Alloy Film on Interconnection /
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銅離子置換低電位沉積錳原子層製備銅錳合金薄膜特性 = = Cu(Mn) Alloy Thin Film Prepared by Using Cu to Replace Underpotential Deposited Mn Through Surface-limited Redox Replacement /
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調控Ru開路電位時間置換低電位沉積Co單層製備CoRu合金薄膜特性 = = Co(Ru) Alloy Thin Film Prepared by Controlling Ru-OCP Time during SLRR to replace the Co-UPD /
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調控鎳開路電位時間置換低電位沉積鈷製備鈷鎳合金薄膜特性 = = Co(Ni) Film Prepared by Controlling Open Circuit Potential Duration of Ni During Surface-limited Redox Replacement of the Underpotential Deposited Co /
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調控低電位沉積層狀製備下世代Co(Ru)合金連導線薄膜 = = Fabrication of Co(Ru) Interconnect Thin Film by Manipulating Monolayer Underpotential Deposition /
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表面侷限氧化還原反應釕置換低電位沉積鈷製備釕鈷合金薄膜特性 = = Ru(Co) Thin Film Prepared by Underpotential Deposition Co and Surface-limited Redox Replacement Ru /
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透過控制鈷和釕的低電位沉積在TiSi2上逐層沉積鈷釕合金薄膜 = = Layer-by-layer deposition of Co(Ru) Films on TiSi2 Substrate by Sequentially Manipulating Underpotential Deposition of Co and Ru /
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以原子層置換法實現微量摻雜銅之鈷合金薄膜特性 = = Characteristics of Cobalt Alloy Thin Films with Trace Copper Doping via Atomic Layer Replacement Method /
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Subjects