低電位沉積.

電化學原子層沉積製備銅銀合金薄膜於連導線應用之特性探討 = = Preparation and Characterisitics of Electrochemical Atomic Layer Deposited Copper-Silver Alloy Film on Interconnection / by: (書目-語言資料,印刷品)

銅離子置換低電位沉積錳原子層製備銅錳合金薄膜特性 = = Cu(Mn) Alloy Thin Film Prepared by Using Cu to Replace Underpotential Deposited Mn Through Surface-limited Redox Replacement / by: (書目-語言資料,印刷品)

調控Ru開路電位時間置換低電位沉積Co單層製備CoRu合金薄膜特性 = = Co(Ru) Alloy Thin Film Prepared by Controlling Ru-OCP Time during SLRR to replace the Co-UPD / by: (書目-語言資料,印刷品)

調控鎳開路電位時間置換低電位沉積鈷製備鈷鎳合金薄膜特性 = = Co(Ni) Film Prepared by Controlling Open Circuit Potential Duration of Ni During Surface-limited Redox Replacement of the Underpotential Deposited Co / by: (書目-語言資料,印刷品)

調控低電位沉積層狀製備下世代Co(Ru)合金連導線薄膜 = = Fabrication of Co(Ru) Interconnect Thin Film by Manipulating Monolayer Underpotential Deposition / by: (書目-語言資料,印刷品)

表面侷限氧化還原反應釕置換低電位沉積鈷製備釕鈷合金薄膜特性 = = Ru(Co) Thin Film Prepared by Underpotential Deposition Co and Surface-limited Redox Replacement Ru / by: (書目-語言資料,印刷品)

透過控制鈷和釕的低電位沉積在TiSi2上逐層沉積鈷釕合金薄膜 = = Layer-by-layer deposition of Co(Ru) Films on TiSi2 Substrate by Sequentially Manipulating Underpotential Deposition of Co and Ru / by: (書目-語言資料,印刷品)

以原子層置換法實現微量摻雜銅之鈷合金薄膜特性 = = Characteristics of Cobalt Alloy Thin Films with Trace Copper Doping via Atomic Layer Replacement Method / by: (書目-語言資料,印刷品)

Electrochemical Atomic Layer Deposition.

Self-Forming Barrier Layer.

鈷鎳合金薄膜.

低電位沉積.

氧化還原置換反應.

Surface-Limited Redox Reaction.

Co(Ru) alloy thin films.

鈷銅合金薄膜.

electrochemical atomic layer deposition (EC-ALD).

半導體互連導線.

Co(Ru) alloy films.

underpotential Deposition.

Co-Cu Alloy Thin Film.

EC-ALD.

自形成阻障層.

鈷釕合金薄膜.

Cu(Mn) alloy thin film.

表面侷限氧化還原反應.

interconnection.

Cu(Mn)合金薄膜.

underpotential (UPD).

redox replacement.

釕鈷合金薄膜.

Ru(Co) alloy thin films.

Trace Doping.

電化學原子層沉積.

表面侷限氧化還原置換.

Interconnects.

interconnects.

Co(Ni) alloy films.

Underpotential Deposition.

連導線.

微量摻雜.