電化學原子層沉積.
Overview
| Works: | 13 works in 13 publications in 13 languages | |
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Titles
透過控制鈷和釕的低電位沉積在TiSi2上逐層沉積鈷釕合金薄膜 = = Layer-by-layer deposition of Co(Ru) Films on TiSi2 Substrate by Sequentially Manipulating Underpotential Deposition of Co and Ru /
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表面侷限氧化還原反應釕置換低電位沉積鈷製備釕鈷合金薄膜特性 = = Ru(Co) Thin Film Prepared by Underpotential Deposition Co and Surface-limited Redox Replacement Ru /
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以脈衝鉛低電位沉積在Ru/pattern/Si基板上製備高填孔性銅薄膜 = = Use of Pulse Pb-UPDs Fabricates a High Gap-Filling Cu Film on Trenched Ru/pattern/Si /
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添加劑與酸鹼值以電化學原子層沉積銅薄膜於鈷基板之特性 = = Additives and pH Value Affecting the Growth of Cu Film Prepared on a Cobalt-based Substrate via Electrochemical Atomic Layer Deposition /
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調控低電位沉積層狀製備下世代Co(Ru)合金連導線薄膜 = = Fabrication of Co(Ru) Interconnect Thin Film by Manipulating Monolayer Underpotential Deposition /
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調控鎳開路電位時間置換低電位沉積鈷製備鈷鎳合金薄膜特性 = = Co(Ni) Film Prepared by Controlling Open Circuit Potential Duration of Ni During Surface-limited Redox Replacement of the Underpotential Deposited Co /
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電化學原子層沉積製備Ag和Ag(Cu)薄膜之特性研究 = = Preparation of Ag andAg(Cu) Thin Film by Electrochemical Atomic Layer Deposition /
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添加劑對鈷基薄膜上以電化學原子層沉積銅薄膜之研究 = = Additives Affecting the Growth of Cu Thin Film Prepared on Cobalt-Based Substrates by Electrochemical Atomic Layer Deposition /
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以電化學原子層沉積Cu(Mn)薄膜的研究 = = Studies of Cu(Mn) Thin Film by Electrochemical Atomic Layer Deposition (EC-ALD) /
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電化學原子層沉積製備銅銀合金薄膜於連導線應用之特性探討 = = Preparation and Characterisitics of Electrochemical Atomic Layer Deposited Copper-Silver Alloy Film on Interconnection /
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以電化學原子層沉積銅釕薄膜之性質 = = Electrochemical Atomic Layer Deposition of Cu-Ru Film /
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(Language materials, printed)
以電化學原子層沉積法於TaN/Ta基板上製備銅薄膜之熱穩定性研究 = = Thermal Stability of Copper Film Prepared on a Tantalum Nitride/Tantalum Substrate by Electrochemical Atomic Layer Deposition /
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調控Ru開路電位時間置換低電位沉積Co單層製備CoRu合金薄膜特性 = = Co(Ru) Alloy Thin Film Prepared by Controlling Ru-OCP Time during SLRR to replace the Co-UPD /
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(Language materials, printed)
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